Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 225-227
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion and n-type doping of Si into GaAs from a novel diffusion source consisting of an undoped SiOx/SiN double-layered film were achieved by rapid thermal annealing at 860–940 °C. The film properties of the double-layered films employed as Si diffusion sources are experimentally presented. The characteristics of the Si diffused layers were investigated by secondary ion mass spectrometry, capacitance-voltage measurement, and the Hall method. The carrier profiles exceeded 2×1018 cm−3 and featured an abrupt diffusion front, while a maximum electron concentration of 6×1018 cm−3 was obtained at 940 °C. The diffused Si profiles were consistent with the SiGa+−VGa− pair diffusion model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110348
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