Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 527-529 (Oct. 2006), p. 1301-1304
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
We have fabricated inversion-type p-channel MOSFETs on 4H-SiC substrates. In thispaper, influences of gate oxidation process on the properties of p-channel MOSFETs wereinvestigated. The gate oxide was formed under these three conditions: (i) dry oxidation, (ii) dryoxidation following wet re-oxidation, and (iii) wet oxidation. The C-V measurements of p-type4H-SiC MOS capacitors revealed that wet oxidation process reduced the interface states near thevalence band. The p-channel MOSFET with low interface states near the valence band indicated lowthreshold voltage (Vth), high field effect channel mobility (μFE) and low subthreshold swing (S). Weobtained 4H-SiC p-channel MOSFET with high μFE of 15.6cm2/Vs by using wet oxidation as gateoxidation process
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1301.pdf
Permalink
|
Standort |
Signatur |
Erwartet |
Verfügbarkeit |