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  • 1
    Electronic Resource
    Electronic Resource
    Structural study of polyaniline films in reprotonation/deprotonation cycles (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 10151-10156 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100177a094
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  • 2
    Electronic Resource
    Electronic Resource
    The chemical nature of the nitrogens in polypyrrole and polyaniline: A comparative study by x-ray photoelectron spectroscopy (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5382-5388 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The chemical nature of the nitrogens corresponding to various intrinsic redox states of polypyrrole (PPY) and polyaniline (PAN) has been critically compared using x-ray photoelectron spectroscopy (XPS) as a primary tool. Proton modifications of nitrogens in PPY give rise to a number of intrinsic redox states analogous to those observed in PAN. The behavior of the corresponding oxidation states in both polymers towards oxidation/reduction, deprotonation/reprotonation, or charge–transfer interactions with electron acceptors are grossly similar. However, the nitrogens of the two oxidized polymer complexes do differ in their thermal degradation behavior which suggests that the oxidized pyrrolylium nitrogens are more susceptible to deprotonation than their oxidized counterparts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460524
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxy barium ferrite thin films on LiTaO3 substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2191-2195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barium hexaferrite (BaM) thin films were deposited on (0001) LiTaO3 substrates by pulsed laser deposition. Effects of the substrate temperature and oxygen gas pressure on the formation and quality of these films were studied. Films deposited at a substrate temperature of 800 °C and an oxygen pressure around 0.23 mbar showed the best c axis normal to the film plane with locked in-plane orientation. The saturation magnetization Ms and anisotropy field Ha measured by vibrating sample magnetometer were almost the same as those reported on bulk barium ferrite. Decreasing oxygen pressure hinders the formation of the Ba layer in BaM magnetoplumbite structure and gives rise to the spinel phase, which greatly decreases coercivity Hc of the films and finally destroys the whole BaM structure. Effects of the lattice mismatch and substrate-induced strains on the film structure were also studied. It was found that barium ferrite thin films grown on LiTaO3 substrates tend to choose a matching mode with compressional strains rather than shear strains. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371029
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  • 4
    Electronic Resource
    Electronic Resource
    The interaction between carbon monoxide and yttrium barium copper oxide, YBa2Cu3Ox, as studied by TG/DTA, FTIR, and XPS (1993)
    s.l. : American Chemical Society
    Inorganic chemistry 32 (1993), S. 3093-3098 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00066a021
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of hydrogen and rf power on the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1611-1616 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the rf power (100 to 600 W) and the hydrogen partial pressure (PH=0.15 to 0.6 Pa.) on the deposition rate and the structural and electrical properties of rf sputtered hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films were investigated. The films were deposited in an argon plus hydrogen ambient. The deposition rate increased with increasing rf power, but decreased with increasing PH. The refractive index increases from 1.85–3.6 as the rf power increases from 100–600 W and from 2.8 to 3.5 as PH increases from 0.15–0.6 Pa. The optical gap increases from 1.5 to 2.15 eV as PH increases from 0.15–0.6 Pa, but decreases from 2.8–1.38 eV as the rf power increases from 100–600 W. The Si–C bond gave the most prominent absorption peak in the infrared spectra, and increased with increasing rf power but not affected by changes in PH. The Si–H bonds increases from 3.06×1021 to 1.64×1022 cm−3 as PH was increased from 0.15–0.6 Pa. The optical gap increases from 1.5–2.15 eV and the conductivity reduces from 7.3×10−9 to 1.9×10−11 Ω−1 cm−1 accordingly. No C–Hn stretching mode was detected in all the films and this was attributed to the low carbon content of the films. We conclude that rf sputtering technique is not effective in varying the carbon content in a-Si1−xCx:H films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362959
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  • 6
    Electronic Resource
    Electronic Resource
    Argon incorporation and surface compositional changes in InP(100) due to low-energy Ar+ ion bombardment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6655-6660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study the Ar incorporation and surface compositional changes in InP(100) after 1–5 keV Ar+ bombardment at various ion fluences. The ARXPS measurements showed that the incorporated Ar concentration achieved saturation at ion bombardment fluences of 〉1016 cm−2. The surface Ar concentration decreased with increasing bombardment energy. No Ar bubbles were observed by atomic force microscopy, suggesting that Ar bubble formation was not the main Ar trapping mechanism. The altered layers were, on average, In rich up to the sampling depth of the ARXPS technique. However, the altered layers were inhomogeneous as a function of depth and appeared more In rich at the surface than in the subsurface region. The results are compared with those obtained by other authors and discussed in the context of preferential sputtering, radiation-enhanced diffusion and segregation, and Ar incorporation. Although the altered layers were In rich, a P-rich phase induced by Ar+ bombardment was identified in the altered layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363789
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  • 7
    Electronic Resource
    Electronic Resource
    Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 827-832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the structural properties of hydrogenated amorphous silicon carbide (a-Si1−xCx:H) films prepared by the plasma-enhanced chemical vapor deposition of silane and acetylene has been undertaken using a combination of infrared (IR), Raman, and x-ray photoelectron spectroscopy (XPS) measurements. The compositions of the silicon, carbon, and hydrogen in the films were found to be dependent on the preparation conditions. From the IR results, it is found that the Si—H bond decreases and the C—H bond increases as the film's carbon increases. The Raman spectra showed that while the Si—Si and C—C bonds can be detected in silicon-rich and carbon-rich samples, respectively, the Si—C band can only be observed in a-Si0.7C0.3:H and a-Si0.5C0.5:H. The XPS results showed that the stoichiometry calculation from the flow rates of the reacting gases was good for a-Si0.7C0.3:H but not for a-Si0.3C0.7:H. Reactive ion etching of the a-Si1−xCx:H films showed that the etch rate was dependent on the films' carbon concentration and films prepared with acetylene as source gas were more resistive to etching compared to that prepared by butadiene. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359006
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  • 8
    Electronic Resource
    Electronic Resource
    Argon incorporation and silicon carbide formation during low energy argon-ion bombardment of Si(100) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2934-2941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Argon incorporation and the formation of silicon carbide in Si(100) by low energy Ar+ ion bombardment have been studied by angle-resolved x-ray photoelectron spectroscopy (XPS). The bombardment was performed at ion energies of 1, 1.5, and 2 keV and various ion fluences in an ultrahigh vacuum chamber equipped with XPS. The XPS measurements showed that the incorporated Ar concentrations achieved saturation in the near-surface region at ion bombardment fluences (approximately-greater-than)1016 cm−2. The surface Ar concentrations decreased with increasing bombardment energy. No Ar bubbles on the surface of Ar+-bombarded samples were observed by atomic force microscopy under these experimental conditions suggesting that Ar bubble formation was not the main Ar trapping mechanism in our study. The SiC formation was confirmed by characteristic XPS peaks of Si 2p and C 1s for SiC. The carbide formed at lower ion fluence was of a metastable structure as inferred by XPS. Bombardment at higher ion fluence yielded a stable carbide phase through continuous ion beam mixing. No strong dependence of carbide depth distribution on bombardment energy was observed suggesting that the carbide phase is probably dispersed inside the bombarded layer and that carbon is bonded to silicon at localized defect sites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361289
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  • 9
    Electronic Resource
    Electronic Resource
    Correlations between CdTe/CdS/SnO2/glass solar cell performance and the interface/surface properties (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2151-2153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface and interface properties of CdTe/CdS/SnO2/glass heterojunction solar cells are studied by means of x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and optical reflectance (OR) techniques. First, n-type CdS layer was grown by solution growth technique on the SnO2 coated glass substrate and then the p-type CdTe was deposited on CdS by metal-organic chemical-vapor deposition. Despite many other efficiency limiting mechanisms in CdTe solar cells, this article shows that surfaces and interfaces play an important role in determining the cell efficiency. In an attempt to correlate the surface and interface properties to the cell performance, a series of CdTe/CdS solar cells with different conversion efficiencies were fabricated and analyzed. It was found that high efficiency cells possess Te-rich CdTe surface along with smooth interfaces, as revealed by XPS, SIMS, and OR measurements, while low efficiency cells display near stoichiometric or Cd-rich CdTe surface and abrupt interfaces. The impact and role of interface/surface properties on CdTe solar cell performance are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361041
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4390-4394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of the electrical and structural properties of rapid thermal annealed Czochralski silicon wafers has been carried out. The electrical properties examined here are the minority carrier lifetime, measured using the laser microwave photoconductance technique, and the donor concentration (Nd), determined by the four-point probe method. Thermal donors were intentionally introduced into the silicon and were found to be completely annihilated by the rapid thermal annealing (RTA) process. The minority carrier lifetime was found to increase significantly for wafers annealed at 900 and 1000 °C. It was concluded that due to the very short annealing time used in this work, a denuded zone was unlikely to form in silicon and be responsible for the increase in the lifetime. Infrared, x-ray photoelectron (XPS) and Auger electron spectroscopies were used for the structural analysis. Auger results showed that higher oxygen concentration could be found in a thicker layer of silicon in annealed wafers, as compared to the as-received, virgin sample. The XPS data showed that the SiO2:Si ratio increased from 0.28 for the virgin sample to 3.5 for wafers annealed at 1000 °C. It is suggested that the Auger and XPS data could be explained by considering oxygen outdiffused from the bulk of the silicon to the native oxide and the silicon next to the native oxide. We believe this is the first investigation of the effect of RTA on the behavior of oxygen and thermal donors, and its influence on the minority carrier lifetime of Czochralski silicon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359844
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