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  • 1
    Electronic Resource
    Electronic Resource
    Output characteristics of an optically pumped Ta vapor laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7253-7256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Output characteristics of an optically pumped tantalum vapor laser and the distribution of tantalum vapor generated by irradiation of a laser have been investigated experimentally. Ta vapor is generated by irradiation of a pulsed YAG laser and then the Ta atoms are optically pumped by a KrF excimer laser. It is observed that the maximum output energy is 160 nJ, the maximum optical conversion efficiency is 0.01%, and the ground-state Ta atoms are distributed not only in the luminous space of the vapor but also around it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349771
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  • 2
    Electronic Resource
    Electronic Resource
    Temporal behavior of population densities of V atoms in an optically pumped V vapor laser (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3181-3185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time variation of population densities of V atoms in absorption levels pertinent to an optically pumped atomic V vapor laser is studied experimentally. V vapor is generated from a V metal by irradiation of a pulsed Nd:YAG (λ=1.06 μm) laser of 2 J/pulse energy and 1.4 ms pulse duration. The population densities of the ground-state and excited-state (E∼2400 cm−1) V atoms have been measured by the interferometric method, and the temperature in the vapor is estimated from these populations. It has been experimentally observed that the populations of the ground state and the excited state are about 1×1014/cm3 and 4×1013/cm3, respectively. The temperature in the vapor increased from about 1800 to 4000 K with time during the YAG laser irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350960
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  • 3
    Electronic Resource
    Electronic Resource
    New laser action of optically pumped atomic vanadium vapor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1044-1045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser action has been observed on the vanadium 560.4-, 575.3-, 581.7-, and 637.9-nm lines. Vanadium vapor is produced from a vanadium metal plate by YAG laser (2.0 J/pulse) irradiation, and optically pumped by an XeCl excimer laser of 25-mJ energy. The vanadium laser pulse has a duration of 50 ns and peak output power of about 7 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350395
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of a population inversion on the 551.4-nm transition in an optically pumped Ti vapor laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 67-72 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A population inversion density on the Ti 551.4-nm (3D01−3F2) transition in a N2 -laser-pumped Ti-vapor laser has been estimated from measurements of an optical gain on the laser transition, length of the laser medium, and temperature in the vapor to determine the linewidth. Ti vapor is generated by irradiation of a pulsed YAG laser light of 1 J/pulse energy and then the Ti atoms are optically pumped by a N2 laser of 0.2 mJ/cm2 intensity. It has been experimentally observed that, in pure Ti vapor, the population of Ti (3d24s2 3F2) is about 8×1013/cm3, the temperature in the vapor is about 9000 K, the population inversion on the 551.4-nm transition is about 1.5×1011/cm3, and the absorption cross section of the N2 -laser light at 337.044 nm by a Ti atom is 3.0×10−15 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347658
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  • 5
    Electronic Resource
    Electronic Resource
    Laser action of optically pumped atomic vanadium vapor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1819-1821 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vanadium vapor is generated from a vanadium metal by irradiation of a pulsed YAG laser of 2.2 J energy, and the vanadium atoms are optically pumped by a XeCl laser of 7.3 mJ energy. Laser action has been observed on the vanadium 409.5 nm (4F07/2–4D5/2) transition. This laser pulse has a pulse width of 4 ns and peak power of 1.08 W, and the optical gain is 0.46/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105242
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  • 6
    Electronic Resource
    Electronic Resource
    Laser action in a KrF-laser-pumped Ta vapor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1290-1292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta vapor is generated from a Ta metal plate by irradiation of a pulsed YAG laser of a 2 J energy, and the Ta atoms are optically pumped by a KrF laser of 10 mJ energy. Ta laser oscillation has been obtained on five lines in the ultraviolet region; 292.5 nm (6F01/2−4P3/2), 322.7 nm (6F03/2−4P5/2), 328.1 nm (6F03/2−6D1/2), 330.4 nm (6F03/2−6D3/2), and 351.4 nm (6F01/2−2P1/2). The gains/cm on these laser lines are 0.35, 0.24, 0.09, 0.09, and 0.20, respectively. A maximum output power of 48 W has been obtained at 2.5 Torr of He buffer gas pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105478
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  • 7
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing using the combustion of H2 with N2O (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combustion of H2 gas with N2O gas was investigated in order to rapidly heat substrate to a high temperature. A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on quartz substrate was used to measure temperature change at the surface. The gas combustion was induced by heating a W filament. It propagated with a velocity higher than 100 m/s throughout a chamber for an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). The sample surface is heated to 800 °C for an initial substrate temperature at 300 °C. The full heating time width at half maximum was 4.5 ms. This letter shows a possibility of millisecond-order rapid thermal treatment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117412
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  • 8
    Electronic Resource
    Electronic Resource
    Pyrolysis of tetraphenyl imidodiphosphate
    Amsterdam : Elsevier
    Journal of Analytical and Applied Pyrolysis 23 (1992), S. 217-227 
    Details
    ISSN: 0165-2370
    Keywords: Imidophosphate ; mass spectrometry ; pyrolysis ; thermal decomposition
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0165-2370(92)80018-H
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  • 9
    Electronic Resource
    Electronic Resource
    Optical characterization of laser-induced crystallized silicon films (1996)
    Springer
    Applied physics 63 (1996), S. 333-336 
    Details
    ISSN: 1432-0630
    Keywords: 78.66.Db ; 61.80.Ba ; 81.10.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV ∼ 3 eV. However, the absorption coefficient was higher than 102 cm−1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( 〉 104 cm−1) in the low photon energy range (1.1 eV ∼ 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 1021 cm3 and the carrier mobility of 20 cm2/Vs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567322
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  • 10
    Electronic Resource
    Electronic Resource
    Optical characterization of laser-induced crystallized silicon films (1996)
    Springer
    Applied physics 63 (1996), S. 333-336 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.66.Db; 61.80.Ba; 81.10.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV∼3 eV. However, the absorption coefficient was higher than 102 cm-1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient (〉104 cm-1) in the low photon energy range (1.1 eV∼1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3×1021 cm3 and the carrier mobility of 20 cm2/Vs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050394
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