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  • 1
    Keywords: Sustainability. ; Landscape ecology. ; Environmental management. ; Conservation biology. ; Ecology . ; Restoration Ecology. ; Human ecology Study and teaching. ; Sustainability. ; Landscape Ecology. ; Environmental Management. ; Conservation Biology. ; Restoration Ecology. ; Environmental Studies.
    Description / Table of Contents: Foreword -- Preface -- Chapter 1. Introduction -- Chapter 2. Reconciling community livelihood needs and biodiversity conservation in Taita Hills forests for improved livelihoods and transformational management of the landscape -- Chapter 3. Degraded landscape transformed into foodland and woodland by village agroforestry -- Chapter 4. Long-term tracking of multiple benefits of participatory forest restoration in marginal cultural landscapes in Himalaya -- Chapter 5. Social-ecological transformation through planting mixed tree species on abandoned agricultural land in the hills of Nepal -- Chapter 6. Transformative change through ecological consumption and production of ancient wheat varieties in Tuscany, Italy -- Chapter 7. Sustainable rural development and water resources management on a hilly landscape: A case study of Gonglaoping community, Taichung, ROC (Chinese Taipei) -- Chapter 8. Transformative change in peri-urban SEPLS and green infrastructure strategies: An analysis from the local to the regional scales in Galicia (NW Spain) -- Chapter 9. Water with Integrated Local Delivery (WILD) for transformative change in socio-ecological management -- Chapter 10. Traditional landscape appropriation of Afro-descendants and collective titling in the Colombian Pacific region: lessons for a transformative change -- Chapter 11. Climate change resiliency through mangrove conservation: the case of Alitas farmers of Infanta, Philippines -- Chapter 12. Improvement of human and environmental health through waste management in Antigua and Barbuda -- Chapter 13. Synthesis: Conception, approaches and strategies for transformative.
    Abstract: This open access book is a compilation of case studies that provide useful knowledge and lessons that derive from on-the-ground activities and contribute to policy recommendations, focusing on the relevance of social-ecological production landscapes and seascapes (SEPLS) to “transformative change.” The concept of “transformative change” has been gaining more attention to deal with today’s environmental and development problems, whereas both policy and scientific communities have been increasingly calling for transformative change toward sustainable society. The Intergovernmental Science-Policy Platform on Biodiversity and Ecosystem Services (IPBES) has planned to start the so-called “assessment on transformative change” if approved by the IPBES plenary to be held in 2021. At present, the idea of transformative change, including its scope, methodologies, approaches and strategies, are yet to be clarified. By bringing together all of the different concerns and interests in the land/seascape, SEPLS approaches could provide practical and experience-based insights for understanding and gauging transformative change and identifying determinants of such change. This book explores how SEPLS management relates to the idea of transformative change to further the discussion of sustainable transitions in advancing sustainability science. The introductory chapter is followed by case study chapters offering real-world examples of transformative change as well as a synthesis chapter clarifying the relevance of the case study findings to policy and academic discussions. It will be of interest to scholars, policymakers and professionals in the fields related to sustainable development.
    Type of Medium: Online Resource
    Pages: XII, 249 p. 78 illus., 73 illus. in color. , online resource.
    Edition: 1st ed. 2021.
    ISBN: 9789813367616
    DDC: 304.2
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4450-4457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the electron tunneling from the nanometer-scale Si, we fabricated tunnel devices with an extremely thin Si-on-insulator layer as a cathode. The devices consisted of a 5-nm-thick Si layer sandwiched between thick SiO2 films, a thin (≈2 nm) SiO2 film (an edge oxide) terminating the Si layer on one side, and a polycrystalline Si (poly-Si) electrode covering the edge oxide. Using this Si/edge-oxide/poly-Si tunnel device, we measured the tunneling current and found that when the poly-Si electrode was positively biased with respect to the Si layer, the current versus voltage characteristics exhibited a steplike feature at 42 K. The current decreased with increasing edge-oxide thickness, indicating that the tunneling at the edge limited the current. The step structure was never observed in the current directly flowing into the poly-Si electrode for devices without the edge oxide. These results indicate that the observed steps reflect the electronic nature of the electron system at the edge of the Si layer. Analysis of the substrate-bias dependence of the tunneling current strongly suggests that electrons are localized at the edge of the Si layer because of the band bending. The effect of one-dimensional subbands on the present tunneling properties is discussed as an origin of the observed steps. Although these steps become less distinct at higher temperatures, they are evident even above 200 K. This indicates that the strong electron confinement occurs at the edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 347-349 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clean polishing is performed by helium-ion etching on a surface of high-Tc YBa2Cu3O7−y. Based on a knock-on cascade model, the decrease of surface roughness is discussed. A rate process of etching is applied for the surface roughness of the high-Tc YBa2Cu3O7−y.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 3229-3234 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of a flow field and the generation of sound due to the interaction between a vortex ring and a shock wave are studied numerically. The axisymmetric, unsteady, compressible Navier–Stokes equations are solved by a finite difference method. The results show that, when the vortex ring moves in the opposite direction to the shock wave, the interaction produces reflected shock waves, first. Then, the reflected shock waves interact with the vortex ring, and new rarefaction and compression waves are produced. The new compression waves interact with the vortex ring again, resulting in the further generation of rarefaction and compression waves. As the strength of the vortex ring is increased, this process is repeated and the pressure waves are generated successively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3190-3194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The new Pt silicide formation method using the reaction between Pt film and SiH4 has been proposed. It has been found that Pt silicide is formed by the reaction with SiH4 at a low temperature range of 250–400 °C. Parabolic relationships of silicide growth using the reaction with SiH4 as well as the growth using the reaction between Pt and substrate Si are confirmed. Pt silicide formation with SiH4 is less influenced by oxygen contamination than the formation by the reaction between Pt and substrate Si.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3618-3620 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal–oxide–semiconductor field-effect transistor (MOSFET), and can, in principle, generate an infinite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process and a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memory operation is successfully demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 637-639 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3121-3123 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Si complementary single-electron inverter in which two identical single-electron transistors (SETs) are packed is fabricated on a silicon-on-insulator substrate. For the fabrication, the vertical pattern-dependent oxidation method, which enables the formation of two tiny SETs aligned in parallel, is modified so that the two SETs can be connected in series to realize an inverter configuration. The resultant circuit occupies a very small area: 100×100 nm for each SET. For complementary operation, the electrical characteristics of one of the SETs are shifted using a side gate situated near the SET. Input–output transfer with a voltage gain larger than unity is demonstrated at 27 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2987-2989 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work proposes an oxidation mechanism for single-crystalline Si overlying a buried SiO2 layer (SOI wafer). Experimental results show that not only the surface oxide but also the buried oxide layer of the SOI wafer grows during the thermal oxidation process. The oxidation behavior is analyzed with a simple model including oxygen diffusion through the superficial single crystalline Si layer, which agrees well with the experimental data. Furthermore, oxygen penetration through the superficial Si layer is verified by oxidation experiments using isotope oxygen. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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