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  • 1
    Electronic Resource
    Electronic Resource
    Tunneling spectroscopy of a quantum resonator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5001-5003 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunneling current across a thin wall of a narrow-wide-narrow (NWN) cavity region in an electron waveguide is calculated. A lead is attached to the cavity region at right angle through a thin tunneling barrier to drain the current. The transmission coefficient through the NWN waveguide shows successive dips due to resonances through quasibound states in the cavity region as the length of the cavity region or the Fermi energy of an incident electron is varied. The transmission coefficient leaking out the tunneling barrier shows peaks that line up with the dips in the forward transmission probability, demonstrating that a tunneling spectroscopy of the quasibound state levels is provided through sweeping the Fermi energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352026
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  • 2
    Electronic Resource
    Electronic Resource
    Two-level fluctuations of in-plane current in a narrow lateral n-i-n junction (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2813-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane current through lateral n-i-n junction in GaAs-AlGaAs heterostructure is measured at low temperature. The junction consists of submicron wide narrow wires and an ion damaged insulating region where percolation is a dominant current-carrying mechanism. The current appears at a sufficiently high bias voltage, due to low temperature avalanche breakdown via impurity impact ionization. Time-dependent random-telegraph signals of 100% modulation in magnitude of the current through the i region are observed, which are caused by slow trappings and emissions of electrons at trap sites. The complete switching signals show a transition from normally off to normally on with increasing applied voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346460
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  • 3
    Electronic Resource
    Electronic Resource
    Electron transmission in interacting quantum resonators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4570-4572 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum transport of electrons in a T-shaped waveguide structure is investigated using the tight-binding model. We take into account electron-electron interaction in the resonator region within the mean-field approximation. The scaling rule breaks down in the interacting system and the effect of the interaction is significant when the sample dimensions become large compared to the effective Bohr radius of electrons. The nearly perfect reflection due to the transmission resonances is shifted to higher energy as the repulsive interaction is increased. The interaction effect in the presence of short-range disorder is also examined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359801
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral potential modulation in periodically line-doped structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 717-721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrostatic potential and the carrier distribution in periodically line-doped structures are calculated within the semiclassical approximation. When the distance between the doped lines is 8 nm, which is a typical periodicity experimentally realized on the (100) GaAs surface, the system is regarded as a lateral superlattice instead of parallel wires because of strong overlap of the electron charge. Moreover, the modulation is anticipated not to be sufficient to probe the electronic state unambiguously. Alternative possible structures to enhance the modulation, which may provide more suitable systems for experiments, are investigated. It is shown that the confinement is stronger for heavier carriers by virtue of their smaller screening length. The coupling among the wires is suppressed by inserting weak p-type dopant lines in between the channels. An application of the line doping to a heterojunction is also examined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359517
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  • 5
    Electronic Resource
    Electronic Resource
    Quantized resistance in in-plane gated narrow constriction fabricated by wet etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow in-plane gated constriction is defined by technique employing electron beam lithography and wet chemical etching. Two-dimensional electron gas beside the narrow channel is used to control the number of occupied subbands in the constriction. A ballistic transport through the point contact is manifested by the observation of successive resistance steps when the subbands are depopulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103729
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  • 6
    Electronic Resource
    Electronic Resource
    Electron distribution in a periodically line-doped GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3258-3260 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrostatic potential and the electron distribution in periodically wirelike Si-doped GaAs are calculated within the semiclassical approximation for a distance between the wires of D=8–16 nm. It is shown that the mutual coupling between channels is significant for these wire separations. The electron distribution is most homogenized when the average electron density is ns∼5×1015 m−2, nearly independent of D. The existence of one-dimensional bound states is found to be unlikely even for ns∼8×1016 m−2 when D=8 nm, indicating that the electron distribution modulation is sustained by two-dimensional states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111302
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum transmission in narrow ballistic wires containing a superconductor island (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 205-207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transmission properties in quantum wires with a superconducting island placed in the center of the channel. The conductance quantization is destroyed, unless the Fermi energies in the quantum wire and the superconductor are identical as a consequence of the single-particle reflection from the normal-conductor–superconductor interface. The conductance exhibits fluctuations due to the quantum interference effect in the island. The fluctuation amplitude is found to depend strongly on the pair potential amplitude in the superconductor. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121756
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  • 8
    Electronic Resource
    Electronic Resource
    Elimination of carrier-density nonuniformities by surface acoustic waves (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2259-2261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The action on a two-dimensional electron gas (2DEG) by electric fields that accompany surface acoustics waves (SAWs) propagating in GaAs-AlxGa1−xAs heterostructures is typically negligible because of screening. In the quantum Hall regime, the longitudinal conductivity of the 2DEG is nearly zero when the Fermi level lies in the Landau gap. Consequently, the SAWs can build up electric fields that are strong enough to rake off mobile electrons. We demonstrate that inhomogeneous carrier distributions produced in the course of photoionization of DX centers can be flattened out by applying the SAWs in high magnetic fields. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126314
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  • 9
    Electronic Resource
    Electronic Resource
    Width dependence of magnetoresistance in GaAs-AlGaAs wires fabricated by mesa etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 340-343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs-AlGaAs quantum wires with various widths have been fabricated using electron beam lithography and Ar ion etching. Conductance was measured as a function of the etched depth and the wire width. The results indicate that defects diffuse at room temperature. Shubnikov–de Haas oscillations in GaAs-AlGaAs film and wires with different widths have been measured to investigate the effect of the surface damage on the electron transport characteristics. The analysis of the results shows that both electron density and scattering time decrease with decreasing the width of the channel. These are indicative of the side wall scattering and the damages induced during the sample preparation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345259
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  • 10
    Electronic Resource
    Electronic Resource
    A local antigenic determinant distribution in a continuous antigenic region at residues 38-54 of hen egg white lysozyme
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 214 (1982), S. 750-762 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(82)90082-0
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