Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1308-1310
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The double-heterostructure optoelectronic switch (DOES) is demonstrated as an N-channel, single quantum well, graded index laser. As a broad-area device, the DOES exhibits excellent electrical switching characteristics of 12 V and 0.04 A cm−2 at the switching condition and 1.8 V and 3.3 A cm−2 at the holding condition with 8.4×10−4 Ω cm2 on state resistance. As a laser, threshold current densities down to 580 A/cm2, loss of 11 cm−1, slope efficiency of 0.35 mA/mW, and total power conversion efficiency of 45% were obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102503
Permalink
|
Location |
Call Number |
Expected |
Availability |