ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A theoretical model for point-defect precipitation in crystals, which is a generalization of the well-know Ham model, has been proposed. The equations obtained are helpful in describing the kinetics of oxygen precipitation in silicon, and in determining the kinetics of variation of the mean geometrical dimensions of clusters. A theoretical model of spatially inhomogeneous precipitation has been developed. This model can be used to describe processes of internal gettering and creation of insulating layers in silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187839
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