ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on investigation of the AC dielectrophoresis aligned assembly deposition(DAAD) of gallium nitride nanowires (GaN NWs) with both the variation of the electric field and thefrequency. Our DAAD methods were used to align and manipulate GaN nanowires as well as toextract the electrical properties of semiconducting nanowires. We observed that the ability of thealignment strongly depends on the magnitude of the AC electric field and frequencies. For the higherAC peak-to-peak electric fields (up to 20 Vp-p), the GaN nanowires have a better alignment across thepatterned Ti / Au electrodes with a high yield rate of ~ 90% over the entire arrays (in our case, 20arrays) in the chip at the 20 kHz. From the transport measurements of our AC aligned GaN nanowiresusing conventional three-probe schemes in field-effect transistor structures, we found that theconductance of the GaN NWs increased for gating voltage greater than zero and decreased for gatingvoltage less than zero, indicating these GaN nanowires have n-type dopants
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.1023.pdf
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