Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 6983-6985
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Magnetoresistive (MR) properties of α-Fe2O3-based spin valves with and without a CoFe/Ru/CoFe synthetic antiferromagnet (SAF) were studied at elevated temperatures and after the annealing in different conditions. The pinning field of the spin valve consisting of α-Fe2O3(20 nm)/CoFe(2 nm)/Ru(0.7 nm)/CoFe(2 nm)/Cu(2 nm)/ CoFe(1 nm)/NiFe(5 nm)/Ta(3 nm)was larger than 300 Oe at 200 °C, which was about five times as much as that of the spin valve consisting of α-Fe2O3(20 nm)/CoFe(2 nm)/Cu(2 nm)/CoFe(1 nm)/NiFe(5 nm)/ Ta(3 nm). The MR ratio and sheet resistance change in the α-Fe2O3(20 nm)/CoFe(2 nm)/Ru(0.7 nm)/CoFe(2 nm)/Cu(2 nm)/ CoFe(0.5 nm)/NiFe(3 nm)/Ta(3 nm)film were 9.8% and 2.6 Ω/(square, open), respectively, after annealing at 270 °C for 3 h. The simple spin-valve structure with the same composition also showed good thermal stability of MR properties against annealing at 200 °C without an applied magnetic field. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372959
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