ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoassisted reactivation of H-passivated Si donors in GaAs has been demonstrated by first-principles calculations. In order to examine the survival of the excited state, we have applied our recently developed scheme of the ab initio molecular dynamics coupled with the time-dependent Schrödinger equation for electrons. We have found a possible electronic excitation which significantly lowers the dissociation-barrier height from 1.79 to 0.23 eV. This result explains well the recent experiment of carrier recovery by laser illumination [D. Loridant-Bernard, S. Mezière, M. Constant, N. Dupuy, B. Sombret, and J. Chevallier, Appl. Phys. Lett. 73, 644 (1998)]. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125188
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