Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 679-681
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using high resolution x-ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60 thin films with a thickness up to 150 nm. The full width at half-maximum of rocking curves of the C60 (111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60 films exceeding a critical thickness. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114097
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