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  • 1
    Electronic Resource
    Electronic Resource
    Low energy nuclear states in124Te (1984)
    Springer
    The European physical journal 315 (1984), S. 213-222 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy level scheme of124Te has been established on the basis of singlesγ-spectra, andγ-γ coincidence measurements carried out using a dual parameter data collection system. Ge(Li) detectors were used to study the gamma spectra produced in theβ − decay of124Sb. Eleven new transitions and two new energy levels are proposed. Relative intensities, branching ratios,α(K) and logft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model: in a first order perturbation approximation to theSU (5) limit, using the complete IBA-1 Hamiltonian, and in theO(6) limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01419382
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  • 2
    Electronic Resource
    Electronic Resource
    Levels and transitions in182W following the decay of182Ta (1983)
    Springer
    The European physical journal 309 (1983), S. 219-232 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy level scheme of182W has been established from γ — γ coincidence studies following the β decay of182Ta. A Dual Parameter Energy-Time spectrometer used a pair of Ge(Li) detectors and a plastic scintillation detector for data collection. Fifteen new transitions were observed and five new energy levels at 1,460.41, 1,592.98, 1,620.36, 1,712.29, and 1,762.91 keV are suggested. The lifetime of three energy levels at 100.10, 1,289.45 and 1,553.57 keV were measured using the method of delayed coincidences. Relative intensities for the transitions and branching ratios of the energy levels were determined. ExperimentalK shell internal conversion coefficients α(K) and logft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with theoretical predictions from the general collective model, the pairing plus quadrupole model and in particular theSU(3) limit of IBA calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01413753
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  • 3
    Electronic Resource
    Electronic Resource
    Levels in152Gd and152Sm populated by the decay of152Eu (1990)
    Springer
    The European physical journal 335 (1990), S. 13-23 
    Details
    ISSN: 1434-601X
    Keywords: 23.20Lv ; 27.70+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy level schemes of152Gd and152Sm have been established on the basis of singlesγ-spectra, andγ- γ coincidence measurements. Ge(Li) detectors were used to study the gamma spectra produced in the EC/β+ and β− decays of152Eu to152Sm and152Gd, respectively. Thirteen new transitions are reported and data from eleven coincidence gates enabled five new levels to be suggested. Relative intensities and logf t values were calculated and spin/parities deduced. Comparisons are made with new predictions of the Interacting Boson Model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289342
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  • 4
    Electronic Resource
    Electronic Resource
    Studies of the low-lying levels in192Pt and192Os (1985)
    Springer
    The European physical journal 320 (1985), S. 495-506 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy level schemes of192Os and192Pt have been established on the basis ofγ- γ coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. andβ − decays of192Ir to192Os and192Pt, respectively. Thirteen new transitions and three new levels at 1,146.95, 1,237.35 and 1,913.76 keV are suggested. Relative intensities from singles measurements, branching ratios,α(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01415728
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  • 5
    Electronic Resource
    Electronic Resource
    Interacting boson-fermion model analysis for159Tb (1994)
    Springer
    The European physical journal 348 (1994), S. 9-15 
    Details
    ISSN: 1434-601X
    Keywords: 21.60.Ev ; 23.20.−g ; 27.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The result of an IBFM multilevel calculation with the 3s 1/2, 2d 3/2, 2d 5/2 and 1g 7/2 single particle orbits are reported for the first time for the positive parity states of the odd mass nucleus159Tb. Comparisons are made with experimental data for energy spectra, transition probabilities, mixing ratios, electric quadrupole and magnetic dipole moments. The agreement with the low-lying spectra suggests an extended comparison up to levels with spin 25/2, thereby testing the predictive power of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01291646
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  • 6
    Electronic Resource
    Electronic Resource
    Low lying energy levels of56Fe from γ-γ coincidences (1980)
    Springer
    The European physical journal 296 (1980), S. 165-171 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The level scheme of56Fe was built up from γ-γ coincidence measurements using Ge(Li) detectors and a Dual Parameter data collection system. The previously suggested γ-transitions [8] of 263.3, 410.9, 485.2, 674.7 and 1,462.3 keV were confirmed and evidence found for a new 655.0 keV γ-transition between the levels at 4,100.32 and 3,445.32 keV. No evidence was found for the transition of 2,657.4 keV and the previously proposed β+-feeding of the level at 3,600.3 keV is ruled out, while the existence of a level at 4,447.5 keV is suggested. The relative intensities and branching ratios of 44 transitions were determined. A calculation of experimentalK-shell internal conversion coefficients α(K) showed large discrepancies from previous studies for the 3,009.6 and 3,451.2 keV transitions, the latter being assigned a different multipolarity. Logft values were calculated and spins and parities of the levels deduced. In particular the assignment of 3+ is verified for the level at 4,297.97 keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01412657
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  • 7
    Electronic Resource
    Electronic Resource
    Use of anodic oxidation as a sectioning technique for diffusion measurements in cadmium telluride (1992)
    Springer
    Journal of materials science 3 (1992), S. 211-217 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A radiotracer sectioning technique that can be used successfully for measuring concentration profiles in diffused slices of single-crystal CdTe using anodic oxidation is described. The technique is useful when the penetration of diffusant is 〈5 μm which, if a good resolution is required, involves removing sections as thin as 0.1 μm. Investigations have shown that the best results are obtained using constant-current techniques, in which the voltage across the oxide layer is directly proportional to the thickness of the layer. This implies that the current passing through the layer is space-charge limited. In addition, mesa and non-mesa sectioning geometries are compared, and it is shown that the former sectioning geometry gives the more accurate profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00703028
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  • 8
    Electronic Resource
    Electronic Resource
    Diffusion of mercury into for HgxCd(1−x)Te 0≤x≤0.03 (1997)
    Springer
    Journal of materials science 8 (1997), S. 333-336 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Experiments carried out to fabricate HgxCd(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the diffusion of mercury into such slices, where 0≤x≤0.03, under saturated vapour pressure conditions, resulted in two component profiles, each profile giving two values of D. These results were similar to ones obtained earlier, indicating that the diffusion was rate-limiting. In addition, the diffusivities were found to be independent of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018595508268
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  • 9
    Electronic Resource
    Electronic Resource
    A comparison of the diffusion of copper, gallium and cadmium in cadmium telluride (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 209-215 
    Details
    ISSN: 1057-9257
    Keywords: Diffusion ; Cadmium telluride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The rates of diffusion of both Ga and Cu in CdTe have been measured over the temperature ranges 350-820 and 200-400°C respectively and the results are compared with the self-diffusion of Cd (350-920°C).In the case of the Cd self-diffusion the Arrhenius graph showed two active diffusion mechanisms, one dominating above 500°C and the other below. It suggested that in the temperature range 500-800°C the main defect responsible for diffusion was Cdi-, with a significant contribution at lower temperatures from the associated defect of the form (CdiVcd)x Below 500°C another mechanism predominated which was possibly due to residual impurities.The results for the diffusions were in close agreement with those obtained by other workers. The Ga diffusions showed a complex behaviour which suggested that two mechanisms were active simultaneously, one independent of Cd partial pressure and the other decreasing with increasing Cd partial pressure.It was concluded that CdTe would be suitable as a diffusion barrier to protect HgxCd1 - xTe devices from Ga contamination from GaAs substrates but would not be efficient at reducing Cu contamination from the substrate in the device.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030130
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  • 10
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    Shypitet al.Reply (1988)
    American Physical Society
    Details
    Publication Date: 1988-11-14
    Print ISSN: 0031-9007
    Electronic ISSN: 1079-7114
    Topics: Physics
    Published by American Physical Society
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