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  • 1
    Monograph available for loan
    Monograph available for loan
    Associated volumes
    Call number: 5/M 08.0033/9
    In: Treatise on geophysics
    Type of Medium: Monograph available for loan
    Pages: xi, 320 S.
    ISBN: 9780444519375
    Location: Reading room
    Branch Library: GFZ Library
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  • 2
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    Unknown
    Springer Nature | Palgrave Macmillan
    Publication Date: 2024-04-07
    Description: This open access book examines how and why the UK's approach towards increasing cultural participation has largely failed to address inequality and inequity in the subsidised cultural sector despite long-standing international policy discourse on this issue. It further examines why meaningful change in cultural policy has not been more forthcoming in the face of this apparent failure. This work examines how a culture of mistrust, blame, and fear between policymakers, practitioners, and participants has resulted in a policy environment that engenders overstated aims, accepts mediocre quality evaluations, encourages narratives of success, and lacks meaningful critical reflection. It shows through extensive field work with cultural professionals and participants how the absence of criticality, transparency, and honesty limits the potential for policy learning, which the authors argue is a precondition to any radical policy change and is necessary for developing a greater understanding of the social construction of policy problems. The book presents a new framework that encourages more open and honest conversations about failure in the cultural sector to support learning strategies that can help avoid these failures in the future.
    Keywords: mistrust ; policy change ; organisational evaluation ; arts and cultural policy ; policy problems ; thema EDItEUR::J Society and Social Sciences::JB Society and culture: general::JBS Social groups, communities and identities::JBSR Social groups: religious groups and communities ; thema EDItEUR::J Society and Social Sciences::JB Society and culture: general::JBC Cultural and media studies::JBCC Cultural studies ; thema EDItEUR::J Society and Social Sciences::JP Politics and government::JPP Public administration
    Language: English
    Format: image/jpeg
    Format: image/jpeg
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  • 3
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    NOAA/National Marine Fisheries Service
    In:  http://aquaticcommons.org/id/eprint/2780 | 403 | 2011-09-29 18:27:57 | 2780 | United States National Marine Fisheries Service
    Publication Date: 2021-06-28
    Description: Length-frequency data collected from inshore and offshore locations in the Gulf of Maine in 1966-1968 indicated that ovigerous female northern shrimp (Pandalus borealis) first appeared offshore in August and September and migratedinshore in the fall and winter. Once eggs hatched, surviving females returned offshore. Juveniles and males migrated offshore during their first two years of life. Sex transition occurred in both inshore and oll'shore waters, but most males changed sex offshore during their third and fourth years. Most shrimp changed sex and matured as females for the first time in their fourth year. Smaller females and females exposed to colder bottom temperatures spawned first. The incidence of egg parasitism peaked in January and was higher for shrimp exposed to warmer bottom temperatures. Accelerated growth at higher temperatures appeared to result in earlier or more rapid sex transition. Males and non-ovigerous females were observed to make diurnal vertical migrations, but were not found in near-surface waters where the temperature exceeded 6°C. Ovigerous females fed more heavily on benthic molluscs in inshore waters in the winter, presumably because the egg masses they were carrying prevented them from migrating vertically at night.Northern shrimp were more abundant in the southwestern region of the Gulf of Maine where bottom temperatures remain low throughout the year. Bottom trawl catch rates were highest in Jeffreys Basin where bottom temperatures were lower than at any other sampling location. Catch rates throughout the study area were inversely related to bottom temperature and reached a maximum at 3°C.An increase of 40% in fecundity between 1973 and 1979 was associated with a decline of 2-3°C in April-July offshore bottom temperatures. Furthermore, a decrease in mean fecundity per 25 mm female between 1965 and 1970 was linearly related to reduced landings between 1969 and 1974. It is hypothesized that temperature-induced changes in fecundity and, possibly, in the extent of egg mortalitydue to parasitism, may provide a mechanism which could partially account for changes in the size of the Gulf of Maine northern shrimp population during the last thirty years. (PDF file contains 28 pages.)
    Keywords: Ecology ; Fisheries ; Biology
    Repository Name: AquaDocs
    Type: monograph
    Format: application/pdf
    Format: application/pdf
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2615-2623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient, uphill diffusion of implanted Mg in GaAs during a 900 °C anneal is simulated using suprem-iv. The diffusion is believed to occur via the substitutional-interstitial-diffusion (SID) mechanism, with excess interstitials and vacancies produced by the implantation process causing this abnormal diffusion behavior. The SID mechanism is shown to be equivalent, in terms of the governing equations, to the interstitial-dopant pair diffusion model used in suprem-iv. This allows one to use suprem-iv, a silicon process simulator that includes dopant–point-defect interactions, to model uphill diffusion once the appropriate diffusivity and defect parameters are included. The profiles of excess interstitials and vacancies produced by the implantation process are obtained from Boltzmann transport equation calculations. The transient uphill diffusion phenomenon can be well simulated using the diffusion model in suprem-iv, with the dopant diffusing from the region of excess interstitials toward the surface and the region of excess vacancies. Once the defect concentrations return to their steady-state levels, either by diffusion, recombination, or capture by sinks, the normal concentration-dependent diffusion into the substrate occurs.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2800-2802 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium implants in GaAs exhibit two types of diffusion during annealing: uphill diffusion in the peak of the implant and concentration-dependent diffusion into the bulk. The uphill diffusion predominates at short times and low temperatures, while the concentration-dependent diffusion is dominant at long times and high temperatures. By studying implants that were annealed at temperatures where no uphill diffusion occurs, diffused profiles could be modeled and an expression for the Mg diffusivity obtained. The activation energy for this process is 1.77 eV. Results from Fermi level experiments show that the diffusivity is hole dependent rather than concentration dependent. The hole-dependent exponent is unity for Mg implanted into semi-insulating substrates, but may change to two at high hole concentrations.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 29 (1990), S. 7648-7660 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 554-556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Be and Mg implants upon post-implant annealing is studied in order to evaluate the influence of implant damage on the diffusion process. Rapid uphill diffusion is observed in the peak of Mg implants in GaAs, whereas Be implants show only uniform, concentration-dependent diffusion. This behavior is explained by the substitutional-interstitial-diffusion mechanism and computer simulations of damage-produced point defects. In the region of uphill diffusion, the dopants diffuse from areas of excess interstitials toward areas of excess vacancies. A critical concentration of point defects is necessary to initiate uphill diffusion. Uphill diffusion can be induced in Be implants by co-implanting with a heavier element such as Ar.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1562-1564 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of substrate topography on nucleation behavior by producing a variety of substrate features on molybdenum and silicon substrates. The initial stages of nucleation on these substrates were studied by exposing them to similar conditions in a hot filament chemical vapor deposition reactor. For these materials, nucleation is favored on prominent features of the substrate; that is, features that protrude with sharp edges or apexes, as opposed to sharp valleys or flat regions. Several possible explanations are given for this behavior.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 909-911 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond crystallites were nucleated and grown from the vapor phase on silicon substrates previously processed into arrays of nanometer-scale silicon wires. We found that the nanowires did not aid nucleation, and that the nucleation density on the nanowire base was very low (〈104 cm−2). Most importantly, we discovered that single diamond crystallites grew around the nanowires, infiltrating the nanowire arrays, forming new composite structures. This discovery clearly shows how inclusions can be trapped in vapor grown diamond crystallites, and challenges the common assumption that growth precursors on the diamond surface are relatively immobile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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