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  • 1
    Electronic Resource
    Electronic Resource
    Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from silacyclobutane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1271-1273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 3C- on 6H-SiC (0001) epitaxial growth from the single-source organosilane precursor silacylobutane (c-C3H6SiH2) has been investigated over the temperature range of 800–1100 °C. Spectrophotometry was used to determine an optical absorption edge of ∼2.27 eV for the films grown at 900 °C, corresponding approximately to the energy band gap of 3C-SiC. The crystallinity, structure, strain, and dislocation density in the 3C-SiC thin films were determined using double crystal x-ray diffractometry (DCXRD). The films grown at 800–1000 °C were found to be exclusively 3C-SiC. The films grown at 1100 °C were a mixture of 3C, 4H, and 6H polytypes of SiC. All films shown an excellent surface morphology. The optimum films are obtained at 900 °C, exhibiting structural properties nearly equal to those of the substrate: narrow DCXRD peak width (∼17 arcsec) and low dislocation density (∼3×106 cm2). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360368
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  • 2
    Electronic Resource
    Electronic Resource
    Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5616-5624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Al-Ga interdiffusion induced by Si focused ion beam implantation and subsequent rapid thermal annealing (RTA) was investigated in an Al0.3Ga0.7As/GaAs superlattice structure with equal 3.5 nm barrier and well widths. Si++ was accelerated to either 50 or 100 kV and implanted parallel to sample normal at doses ranging from 1013 to 1015/cm2. The effect of rapid thermal anneal of 10 s at 950 °C was characterized by the secondary ion mass spectrometry technique. In the implanted region, the interdiffusion causing compositional mixing was significantly enhanced by the Si implantation. An ion dose as low as 1×1014/cm2 results in a two-order of magnitude increase in the interdiffusion coefficient, to a value of 4.5×10−14 cm2/s, producing a mixing effectiveness of ∼90%. In contrast, the RTA-only case produces an interdiffusion coefficient of 1.3×10−16 cm2/s and very little mixing. A strong depth dependence of the mixing process was observed at 100 keV implantation energy, with a "pinch-off'' (more heavily mixed) region being formed at a certain depth. It is noticed that the depth where this enhancement occurred is not associated with either the maximum concentration of Si ions or of vacancies. Instead, it coincides with the positive maximum of the second derivative of the vacancy profile, which in turn represents a maximum in the vacancy injection generated by the presence of a transient vacancy concentration gradient. Based on these findings, a theoretical model was developed using vacancy injection as responsible for mixing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359203
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt58B42) liquid-metal ion source (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 878-886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of a eutectic boron platinum (Pt58B42) liquid-metal ion source (LMIS) were analyzed and investigated with a quadrupole mass spectrometer (QMS), Auger electron spectroscopy (AES), and Rutherford backscattering spectroscopy (RBS). The source characteristics can be explained by the hydrodynamic model, particularly for needle geometry LMIS. Surface analysis with RBS and AES indicated that more boron is produced in the ion beam than left in the liquid alloy reservoir and more droplets are produced with a 10-μm emitter tip radius, which reduced boron current in the beam. The source instability was associated with droplet formation. AES results show that substantial neutral ions were produced which was not detected by QMS. RBS results on the depleted residual alloy remaining on the carbon ribbon heater indicated that the cause of the alloy system's short lifetime (33 h) is due to a change in alloy stoichiometry to a higher platinum content. Three different emitter tip radii (2.5, 5, and 10 μm) made of graphite were used in the present investigation. Higher boron current and high stability during ion emission was recorded with 2.5-μm graphite emitter tip radius than with the 5- or 10-μm tip radii.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340029
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricated by focused ion beam mixing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 179-181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs quantum well (QW) lasers with distributed Bragg reflection (DBR) Al0.3Ga0.7As/GaAs superlattice gratings have been fabricated by the single-step, maskless focused ion beam (FIB) mixing. 200 keV Si++ FIB implantation with a beam diameter of ∼60–70 nm and a dose of 1014 cm−2 was used to obtain localized compositional mixing. The DBR grating period was 350 nm, corresponding to a third order grating matched to the emission from the 30 nm wide QW. Lasing operation was examined by optical pumping. With a pumping power 1.6× the threshold value, lasing modes were observed near 827 nm, with a spacing of 3 A(ring) and a linewidth of 1.5 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114659
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  • 5
    Electronic Resource
    Electronic Resource
    Shallow Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2318-2322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam Ga+ implantation through Ti metal (ITM) and TiSi2 (ITS) layers, followed by rapid thermal annealing (RTA), has been investigated for application in self-aligned silicide technology. The Ga+ energy was varied from 25 to 50 keV at doses of 1×1013 and 1×1015 cm−2 followed by RTA at 600 °C for 30 s. Depth profiles of the Ga implants were obtained by performing secondary-ion mass spectrometry. It was observed that higher-energy and higher-dose implants yielded good quality p+-n junction characteristics. Diodes were fabricated to obtain the electrical properties of these silicided junctions. At higher implant energies (≥40 keV) and all doses, I-V characteristics of ITS diodes showed 100 times lower leakage currents (Ir) than ITM diodes. For low-energy (〈40 keV)/high-dose implantation the ITS diodes showed a slight improvement in Ir over the ITM diodes, whereas for low-energy/low-dose implantation the same Ir was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354717
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  • 6
    Electronic Resource
    Electronic Resource
    Sub-100-nm p+-n shallow junctions fabricated by group III dual ion implantation and rapid thermal annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of p+-n junctions with depth less than 100 nm using dual ion implantation of group III species (69Ga, 115In, 11B, 49BF2) in various combinations is reported. We have investigated both the single use of heavy group III (Ga and In) ions for creating shallow junctions and the dual implant approach where Ga or In was first used for preamorphization (and doping) followed by a B or BF2 implant. The optimum cases for sub-100-nm shallow junction formation among the group III combinations evaluated are Ga/B dual ion implantation followed by low-temperature (550–600 °C) rapid thermal annealing (RTA) for 15–30 s and In/B(B or BF2) dual ion implantation with higher temperature (900–1000 °C) RTA for 10 s. Junction depths of 60–100 nm and sheet resistances of 150–300 Ω/(D'Alembertian) were obtained. Shallow junction diodes fabricated by this dual ion implant technology exhibit low leakage current densities of 8–30 nA/cm2 and good ideality factors of 1.01–1.05.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101491
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  • 7
    Electronic Resource
    Electronic Resource
    Si p+-n shallow junction fabrication using on-axis Ga+ implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p+-n shallow junction fabrication using on-axis Ga implantation into crystalline and preamorphized Si, in conjuction with rapid thermal annealing, is reported. The implants are performed at energies of 50 and 75 keV for doses of 1 and 3.5×1015/cm2. Taking advantage of the short Ga projection range, low critical dosage (2×1014/cm2) needed for amorphizing the implanted layer, and a low anneal temperature (550–600 °C) required to induce solid phase epitaxial regrowth and activate the Ga dopants in excess of its maximum solid solubility in Si, a shallow junction at a depth of 100 nm and with sheet resistance of 150 Ω/(D'Alembertian) was obtained using 75 keV Ga implantation at a dose of 1×1015/cm2. The sheet resistance of the Ga-implanted layer can be optimized by adjusting the anneal temperature and time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99577
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  • 8
    Electronic Resource
    Electronic Resource
    Growth-temperature dependence of Er-doped GaN luminescent thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 344-346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence (PL) and electroluminescence (EL) emission has been observed from Er-doped GaN thin films grown on (111) Si at various temperatures from 100 to 750 °C in a radio-frequency plasma molecular beam epitaxy system. PL and EL intensities of green emission at 537 nm from GaN:Er films exhibited strong dependence on the growth temperature, with a maximum at 600 °C. Scanning electron and atomic force microscopy showed smooth surfaces at 600 °C and rough surfaces at 100 and 750 °C. X-ray diffraction indicated that the GaN:Er film structure was oriented with the c axis perpendicular to the substrate for all growth temperatures. The crystalline quality initially improves with an increase in growth temperature, and saturates at ∼500 °C. Considering both the luminescence and structural properties of the film, ∼600 °C seems to be the optimal temperature for growth of Er-doped GaN luminescent films on Si substrates. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1434312
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  • 9
    Electronic Resource
    Electronic Resource
    Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1525-1527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Orange and yellow-colored light emission has been achieved at room temperature in the same elecroluminescent device (ELD) made on GaN thin films codoped with Er and Eu. The GaN film was grown by molecular-beam epitaxy on Si (111) substrates using solid sources for Ga, Er and Eu and a plasma source for N2. Simple Schottky devices were fabricated on the GaN films using indium–tin oxide (ITO) transparent electrodes. ELD spectra show that the yellow and orange colors result from the combination of green emission from Er (537, 558 nm) and red emission from Eu (621 nm). A color change was observed with applied bias, producing yellow at higher bias (−100 V) and orange at lower bias (−70 V). We have fabricated both relatively small (∼250 μm) and large (1.45 mm) ELDs. Parameters for the chromaticity diagram were calculated to be x=0.382, y=0.605 for the yellow emission and x=0.467, y=0.523 for the orange emission. This work shows the possibility of achieving any intermediate color in the spectrum from green to red by adjusting the concentration of Er and Eu in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126084
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  • 10
    Electronic Resource
    Electronic Resource
    Alternating current thin-film electroluminescence of GaN:Er (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3520-3522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film electroluminescence has been obtained from GaN:Er deposited directly on amorphous dielectric layers. Electroluminescent device (ELD) structures consisting of metal/dielectric/GaN:Er/dielectric were fabricated on p+-Si substrates. In contrast to previous GaN:Er ELDs which used epitaxial growth conditions on crystalline substrates and were operated under direct current bias, these ELDs were operated under alternating current bias. Under bias conditions of 170 peak voltage (Vp) and frequencies of 10 and 100 kHz, the ELDs exhibit a luminance of 50 and 300 cd/m2, respectively. The emission spectra, which originate from Er3+ 4f–4f transitions, consist of dominant green emission at ∼537/558 nm accompanied by violet (415 nm) and infrared (1.5 μm) peaks. The violet emission peak indicates that hot carriers can gain up to ∼3 eV energy for a Vp corresponding to 1.5 MV/cm applied field. The emitted intensity initially increases linearly with frequency, followed by a trend towards saturation. The frequency for 3 dB reduction from the linear relation is at ∼65 kHz for the visible emission and ∼8 kHz for the infrared emission. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330564
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