ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polybuffered LOCOS is used for isolation of active devices in submicron integrated circuits. Many papers have reported on the defects resulting from this process. We report, for the first time, on the structure and composition of these defects and relate the defects to a phenomenon similar to the traditional Kooi effect [E. Kooi, J. G. van Lierop, and J. A. Apples, J. Electrochem. Soc. 123, 1117 (1976)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107038
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