ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the capability of fluorescence x-ray microscopy with a 0.25 μm beam for in situ measurements of Cu-wiring interconnects of submicron dimensions. We are able to measure submicron line widths, lengths, and thicknesses of both Cu and W structures, and a Ta liner in the test vehicle, to the absolute accuracy of 0.03 μm, and a relative accuracy of ∼4% in lateral dimensions, and ∼10% in heights. The shape of a buried electromigration void was also determined. This nanoscale nondestructive characterization technique promises to be powerful for a variety of materials systems. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1339996
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