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  • 1
    Monograph available for loan
    Monograph available for loan
    Normais climatológicas (1941)
    Rio de Janeiro : Serviço de informação agrícola, Ministério da agricultura
    Details Availability
    Call number: MOP 19977
    Type of Medium: Monograph available for loan
    Pages: 167 S.
    Location: MOP - must be ordered
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Electron and γ irradiation effects in InP assessed by photoluminescence (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3482-3486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different InP samples were exposed to electron and γ radiation at 300 and 77 K, respectively. The effects of the exposure to high energy radiation were investigated by photoluminescence. A major reduction in the photoluminescence signal from all samples was observed due to the defects introduced. In the case of γ-irradiated samples, the photoluminescence characteristics were recovered after room temperature aging while for the electron irradiated ones a heat treatment either at 473 or 673 K was required for annealing out the radiation-induced defects. The different roles played by the amphoteric dopant Sn and the n dopant S in the changes in the photoluminescence near band-edge spectra are addressed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361397
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of different Si-related photoluminescence emissions involved in a deep broadband in Al0.3Ga0.7As (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7013-7018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed photoluminescence study of a deep broadband emission as a function of the dopant concentration is conducted in molecular-beam epitaxy-grown silicon-doped Al0.3Ga0.7As single layers. The deep broadband which is correlated to the Si concentration consists of several emissions among which three are suggested to be due to different Si complexes. The effects of annealing the samples contributed immensely to this investigation. A model to explain the direct and indirect participations of SiAs in the formation of Si complexes during heat treatment is proposed. The photoluminescence is complemented by the Hall-effect, capacitance, and secondary-ion-mass spectroscopy measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345047
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1660-1662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Good-optical-quality C delta-doped AlGaAs layers grown by metalorganic vapor phase epitaxy using CBr4 with the impurities confined over not more than 5 Å and with doping levels above 1×1012 cm−2 are obtained. Such layers are found to be adequate for use in the fabrication of nipi superlattices for amplitude modulation. Yet, little flexibility is found in the growth conditions, in particular for the V to III fluxes ratio, for obtaining such layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382826
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  • 5
    Electronic Resource
    Electronic Resource
    New silicon-related deep broadband luminescence emission in Al0.3Ga0.7As epitaxial layers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 444-447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence spectra of variously silicon-doped Al0.3Ga0.7As (Al0.3Ga0.7As@B: Si) single layers grown by molecular-beam epitaxy were investigated as a function of silicon effusion-cell temperature. A correlation between silicon incorporation as a complex involving SiAs and the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341216
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  • 6
    Electronic Resource
    Electronic Resource
    Surface mode coupling in GaAs/AlGaAs laser diodes—A novel concept for a single laser mode emission (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 452-454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel concept for a mode selection mechanism in surface emitting laser diodes. This concept is based on a strong coupling process between the laser mode and a surface mode on top of the laser diode. The mode selection mechanism is the result of a strong feedback from the surface mode into the laser diode. Nearly single-modelike emission spectra are achieved from surface emitting GaAs/AlGaAs laser diodes and qualitatively explained by a model based on ray optics. The main advantage of this type of laser diode is its simple fabrication and the possibility of adjusting the desired wavelength independent of the growth process by external technological parameters. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114533
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  • 7
    Electronic Resource
    Electronic Resource
    SiAs related photoluminescence emissions in low-temperature AlxGa1−xAs grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1498-1501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence emission attributed to (SiAs-VAs) at 1.77 eV at 77 K has been previously observed in annealed Si-doped Al0.3Ga0.7As layers grown by molecular beam epitaxy at 680 °C. An emission with similar characteristics has now been observed in as-grown samples fabricated at lower temperatures. New results render the attribution of the deep PL emission to the pair (SiIII-SiAs) more likely. The possibility of a heat treatment producing the same defect as a low-temperature molecular beam epitaxy growth is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351716
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1700-1705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of periodically Si δ-doped InP samples with 5 and 10 periods varying from 92 to 278 Å has been investigated in terms of the transport and optical properties. A reduction in mobility with decreasing period was observed due to the increasing overlap of the electronic wavefunction with the various Si planes. A broad band emission was detected for the periodic structures at energies higher than the InP band gap. The cutoff energy for this band decreases with the period and this behavior can be described by a d−2/3 decay. The results are discussed and compared with the ones for GaAs available in the literature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365946
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  • 9
    Electronic Resource
    Electronic Resource
    Novel wide-band time-resolved photoreflectance measurement technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 88-90 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new versatile and simple pump-and-probe technique to measure the change in reflectivity (ΔR) and to time resolve the signal in a time scale faster than the responsivity of the detector used. Also, by slightly changing the experimental conditions, decay times ranging from 0.2 ns to 0.1 ms can be measured. This technique presents the advantage of eliminating in a natural way any undesirable photoluminescence or background signal. Important parameters for carrier dynamics studies are extracted from the time-resolved signal obtained. In addition, no contribution to the change in reflectivity due to band-filling effects was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113084
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  • 10
    Electronic Resource
    Electronic Resource
    Chirp dependence in InGaAs/InAlAs multiple quantum well electro-absorptive modulators near polarization-independent conditions (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 271-273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the dependence of the chirp parameter on heavy- and light-hole energy splitting by analyzing the change in the absorption curve of different InGaAs/InAlAs p-i-n multiple quantum well structures designed for use in amplitude modulators. We observe, for the transverse electric mode, a high chirp parameter for the sample whose fundamental transition involves the light hole, whereas for samples whose fundamental transition involves the heavy hole, the more polarization sensitive the samples are, the smaller the chirp parameter is. This indicates that it is not possible to have tensile strained InGaAs/InAlAs multiple quantum well structures for electro-absorptive modulators which are simultaneously chirp-free and polarization independent. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124345
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