ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
c-BN film was synthesized using ME-ARE on Si substrate. The deposition process was optimized via the Taguchi method. The optimized conditions were as follows: substrate temperature, anode (plasma) current, Ar/N2 ratio, pulse frequency, duty frequency, bias voltage and deposition time were 500°C, 15A, 3, 1 kHz, 50%, -130V and 15 min, respectively. The crosssectional TEM observation revealed that the c-BN films with a thickness of 100nm ~300nm were composed of two layers, a columnar h-BN layer with a thickness of 30nm~40 nm normal to Si substrate and a c-BN structure
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.465.pdf
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