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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic resonance spectroscopy in silver-doped silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1797-1801 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45 and Si-NL46, with the perpendicular g values close to 6 and 8, can alternatively be described by electron spins S=5/2 and S=7/2, respectively, and g values close to 2. The Si-NL47 center has both principal g values significantly deviating from 2. They can be accounted for by taking crystal-field splitting and spin-orbit coupling into consideration. On the basis of the correlation of the production of these centers with the Si-NL44 center and the analysis with high values of electron spin, all these centers are tentatively identified as silver-related complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353188
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4348-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and Zeeman effect measurements in near-infrared luminescence bands in Cr-doped 4H and 6H SiC are presented. The PL spectrum consists of two no-phonon lines (NPLs) at 1.1583 and 1.1898 eV in 4H SiC and three NPLs at 1.1556, 1.1797, and 1.1886 eV in 6H SiC. The observed Zeeman splittings and temperature dependence studies reveal the spin triplet of the ground state and the orbital doublet structure of the excited state of the Cr-related center. All the triplets have almost isotropic g values close to 2 with trigonal symmetry and small zero-field splitting values D. In contrast, the effective g values of the excited state of the center are very anisotropic with g(parallel) in the range of 0.22–0.64 and g⊥=0 for different NPLs in both polytypes. Based on the Zeeman results, the PL is attributed to the internal transition 1E(D)→3A2(F) within the d shell of a substitutional, neutral chromium (Cr4+) in the 3d2 electronic configuration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371368
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  • 3
    Electronic Resource
    Electronic Resource
    Metastable defects in 6H–SiC: experiments and modeling (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1324-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The thermal ionization energies for the different configurations were measured and the thermal barriers for two of the transitions have been determined. It is also shown that the transformation process is governed by electron capturing to the defect. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427401
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of microwave fields on recombination processes in 4H and 6H SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1929-1932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low temperatures and in a common range of microwave power (〈200 mW), is microwave-induced lattice heating under the cyclotron resonance conditions. The results also show that at low temperatures and low microwave power the dominant scattering mechanism is impurity scattering, while carrier scattering by lattice phonons dominates under high microwave power conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364048
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  • 5
    Electronic Resource
    Electronic Resource
    Dominant recombination center in electron-irradiated 3C SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3784-3786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level defects and their role in carrier recombination processes in electron-irradiated 3C SiC have been studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR). An isotropic ODMR spectrum, with a g value of 2.0061±0.0002 and an effective electron spin S=1/2, is observed in irradiated 3C SiC films. From the spectral dependence studies of the ODMR signal, the defect is shown to be a deep level center related to a radiation-induced PL band with a zero-phonon line at 1.121 eV. Due to the competition between different carrier recombination channels, this ODMR spectrum can also be observed as a decrease of any other PL emissions from the sample, indicating its dominant role in recombination processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361214
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  • 6
    Electronic Resource
    Electronic Resource
    Capture cross sections of electron irradiation induced defects in 6H–SiC (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 704-708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of electron irradiation induced deep levels in 6H–SiC p+n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy (DLTS) reveals several overlapping peaks in the temperature range 140–650 K. The electron capture cross sections have been measured by directly observing the variation of the DLTS peak height with the duration of the filling pulse and fitting the capacitance transient using multiple linear regression. Temperature dependence studies of the electron capture cross section were performed on three of the observed levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368125
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  • 7
    Electronic Resource
    Electronic Resource
    Possible lifetime-limiting defect in 6H SiC (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2687-2689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We reveal and investigate a possible lifetime-limiting defect in as-grown 6H SiC by optical detection of magnetic resonance (ODMR). This defect is shown to be a deep level center (with an energy level at about Ec−1.1 eV), evident from the related deep photoluminescence emission and a photo-excitation spectrum of the ODMR signal. The fact that this defect has been observed in both bulk crystals and epilayers, regardless of their doping type, indicates that this must be a common and basic defect in 6H SiC. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112962
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  • 8
    Electronic Resource
    Electronic Resource
    Electron effective masses and mobilities in high-purity 6H–SiC chemical vapor deposition layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3209-3211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first observation of cyclotron resonance in 6H-SiC by optically detected cyclotron resonance (ODCR) spectroscopy at X-band microwave frequency is reported. High purity undoped, n-type 6H-SiC layers grown by chemical vapor deposition (CVD), with residual doping concentrations in the 1014–1015 cm−3 range, were investigated. Effective mass values were determined as m*⊥=(0.42±0.02)m0 and m*(parallel)=(2.0±0.2)m0. From the fit of the ODCR line shape, a remarkably high mobility at 6 K was deduced: μ⊥≈1.1×105 cm2/V s for electrons in the basal plane. The anisotropy of the effective mass and the carrier mobility is discussed in comparison with previously reported data. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112956
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  • 9
    Electronic Resource
    Electronic Resource
    High quality 4H-SiC epitaxial layers grown by chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1373-1375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality, homoepitaxial layers of 4H-SiC have been grown by chemical vapor deposition in a hot-wall reactor. The residual doping concentration obtained by capacitance versus voltage measurements was as low as 2×1014 cm−3. The high quality is confirmed by photoluminescence measurements performed at low temperatures (1.8–4.2 K) showing strong free exciton related luminescence and by the fact that optically detected cyclotron resonance signals could be observed (at 6 K), as a result of the highest mobility reported in SiC. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113205
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  • 10
    Electronic Resource
    Electronic Resource
    Efficient excitation transfer in silicon studied by Fourier transform photoluminescence excitation spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1498-1500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct experimental evidence of excitation transfer in the recombination via deep defects in silicon is provided, by a novel approach of Fourier transform photoluminescence excitation spectroscopy. The 735 meV iron-related defect in Si is used as a model case. It is shown that this defect can be excited via two deep states of other centers that give rise to broad lines in the excitation spectrum at 976.3 and 1115.6 meV. The linewidths of these features infer extremely efficient transfer processes. Such an efficient excitation transfer is expected to play an important role in excitation and recombination processes in silicon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113667
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