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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1565-1569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the temperature dependence of the carrier density in epitaxial layers of semiconductors deposited on semi-insulating substrates when the potentials at the surface and the substrate interface are pinned. The results of these calculations are compared to experiments on thin, nominally undoped p-type layers of GaAs deposited epitaxially on EL2-dominated substrates. The theory predicts that as the temperature is lowered to some critical value the depletion layers at the edges of the epilayer overlap for thin, lightly doped samples. Below this value the carrier density decreases exponentially with inverse temperature with an activation energy which depends on the surface and interface potentials, as well as on the dopant concentration and the width of the layer. This activation energy can be derived analytically for strong depletion. In the intermediate range between negligible and complete depletion of the layer the carrier density must be obtained by numerical methods, and we present the results of such a calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349518
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  • 2
    Electronic Resource
    Electronic Resource
    On the rectifying ability of a p-type semi-insulating junction (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5408-5419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The system consisting of an unintentionally doped GaAs epitaxial layer on a semi-insulating (SI) GaAs substrate forms a starting point for the GaAs integrated circuit technology. It is also the genesis of problems for GaAs field-effect transistors (FETs) in the form of back gating. Potentials applied to a point on the surface may propagate several millimeters to modulate the conduction of an FET built into the layer. In addition, the conductivity of the epilayer may be efficiently modulated by a potential applied to the back of the SI substrate. Well-developed p-channel FET characteristics have been observed in an epilayer on top of a 0.4-mm-thick SI substrate using the back of the substrate as a gate. Numerical simulations revealed that under some circumstances potentials may propagate across the substrate with little attenuation, giving a degree of modulation in agreement with experiment. Conditions for current transport then corresponded closely to those in a rectifying p-n junction. The parameter space was fully explored numerically and using an analytical model, and a simple set of conditions for rectification were developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350198
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  • 3
    Electronic Resource
    Electronic Resource
    Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2285-2287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor-insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104900
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  • 4
    Electronic Resource
    Electronic Resource
    Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET's) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET's with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98657
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the conduction-band discontinuity between In0.53Ga0.47As/In0.52Al0.48As using n+-InGaAs/InAlAs/n−-InGaAs capacitors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1709-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction-band discontinuity (ΔEc) between In0.53Ga0.47As and In0.52Al0.48As is determined by current-voltage measurements on n+-InGaAs/InAlAs/n−-InGaAs capacitors. Current is found to be dominated by thermionic emission conduction down to 180 K. Barrier heights are determined from the slope of ln(J/T2) vs 1/T where good straight-line fits are obtained in the thermionic emission range. After correcting for the Fermi level a conduction-band discontinuity of 0.51±0.04 eV is obtained representing 70% of the total band-gap discontinuity. Furthermore, capacitance-voltage measurements are fit to classical capacitance-voltage theory and show that no charge is present in the InAlAs insulating layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337262
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  • 6
    Electronic Resource
    Electronic Resource
    Direct measurement of the energy distribution of hot electrons in silicon dioxide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1302-1313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of hot electrons in high-field stressed amorphous silicon dioxide (SiO2) films have been measured using a vacuum emission technique. Electrons having average energies (approximately-greater-than)2 eV and an energy relaxation length of λ≈32 A(ring) are observed at all fields studied ((approximately-greater-than) 2 MV/cm). However, contrary to previous theoretical expectations, the majority of carriers in the distribution remains stable at all fields. The results are in agreement with other recent experiments (electroluminescence and carrier separation) which only measure the average energy of hot electrons in SiO2 and with recent Monte Carlo transport calculations which include scattering by both optical and acoustic phonon modes. Results for varying SiO2 thickness, metal gate thickness, oxide composition, and metal gate composition will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336098
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 787-789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction (HRXRD) is proposed as a nondestructive tool for the characterization of the silicon on insulator (SOI) film in bonded wafers. Although the bonded stack may consist of many amorphous layers, the measured diffraction spectra only show the crystalline SOI layer, thus providing a direct measurement of the film. We have demonstrated that HRXRD is capable of accurately measuring the film thickness, the tilt of the film planes with respect to the substrate planes, and the rotation misalignment of the bonded film with respect to the carrier substrate. SOI films with thicknesses down to 30 nm were readily measured with accuracy better than 1%. It is shown that an angular separation between the layer and the substrate diffraction peaks is maintained due to an unintentional miscut which usually exists in the starting wafers used for bonding. This angular separation is unique to bonded wafers as opposed to separation by implanted oxygen (SIMOX) wafers where the layer and substrate peaks are nonseparable. Calculated diffraction spectra based on the kinematic approach showed excellent agreement with the measured diffraction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124513
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  • 8
    Electronic Resource
    Electronic Resource
    DEVICE INNOVATION AND MATERIAL CHALLENGES AT THE LIMITS OF CMOS TECHNOLOGY (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 681-697 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Scaling of the predominant silicon complementary metal-oxide semiconductor (CMOS) technology is finally approaching an end after decades of exponential growth. This review explores the reasons for this limit and some of the strategies available to the semiconductor industry to continue the technology extension. Evolutionary change to the silicon transistor will be pursued as long as possible, with increasing demands being placed on materials. Eventually new materials such a silicon-germanium may be used, and new device topologies such as the double-gated transistor may be employed. These strategies are being pursued in research organizations today. It is likely that planar technology will reach its limit with devices on the 10-nm scale, and then the third dimension will have to be exploited more efficiently to achieve further performance and density improvements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.681
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  • 9
    Electronic Resource
    Electronic Resource
    Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2844-2853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined current-voltage (I-V) and capacitance-voltage (C-V) measurements on n− GaAs–Al0.4Ga0.6As–n+ GaAs capacitors with different thicknesses of Al0.4Ga0.6As to determine the conduction-band discontinuity at the Al0.4Ga0.6As–n+ GaAs interface. Undoped AlxGa1−xAs deposited by molecular-beam epitaxy contains negative charge. We calculate the effect of band bending in undoped AlxGa1−xAs due to negative charge on measured barrier heights and on C-V curves. The temperature dependence of I-V curves is analyzed in terms of thermionic emission to derive barrier heights at the n+ GaAs–Al0.4Ga0.6As interface φG. Measured values of φG are proportional to the square of the insulator thickness, w, showing that negative charge is uniformly distributed through undoped Al0.4Ga0.6As. Combining values of Fermi energy and band bending at zero bias with φG at zero Al0.4Ga0.6As thickness, we find that the value of the barrier discontinuity for n+ GaAs–Al0.4Ga0.6As is ∼0.30 V. This corresponds to a ratio of conduction-band discontinuity ΔEC to band-gap difference ΔEG of 0.63±0.03, which is appreciably less than the value 0.85±0.03 that is widely accepted. We find that the dielectric constant of Al0.4Ga0.6As is more temperature dependent than that of GaAs between 77 and 250 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335221
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  • 10
    Electronic Resource
    Electronic Resource
    A temperature-independent capacitance in semiconductor-insulator-semiconductor capacitors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6548-6551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both measurements of capacitance-voltage (C-V) curves of n− GaAs-undoped Al xGa1− xAs- n+ GaAs (AlGaAs) capacitors at different temperatures, and calculations of C-V curves of semiconductor-insulator-semiconductor (SIS) capacitors at different temperatures, show that there is a temperature-invariant capacitance CC and voltage VC at which C-V curves at different temperatures intersect. We show that this is a general property of SIS capacitors having a degenerate gate and nondegenerate substrate of the same doping type, and that qVC, where q is the electron charge, is approximately equal to the Fermi energy of the degenerate GaAs gate. VC provides a good estimate for the voltage required to establish an accumulation layer on n− GaAs at low temperatures, which is determined from magnetotunneling measurements on AlGaAs capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345133
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