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  • 1
    Monograph available for loan
    Monograph available for loan
    Numerische Realisierung von Variationsmethoden (1969)
    Berlin : Akad.-Verl.
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    Details Availability
    Call number: MOP 38726
    In: Mathematische Lehrbücher und Monographien
    Type of Medium: Monograph available for loan
    Pages: XI, 343 S. : Ill.
    Series Statement: Mathematische Lehrbücher und Monographien : Abteilung 2, Mathematische Monographien 23
    Uniform Title: Čislennaja realizacija variacionnich metodov
    Language: German
    Location: MOP - must be ordered
    Branch Library: GFZ Library
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  • 2
    Monograph available for loan
    Monograph available for loan
    Singuläre Integraloperatoren (1980)
    Berlin : Akad.-Verl.
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    Call number: O 2431/II.52
    In: Mathematische Lehrbücher und Monographien
    Type of Medium: Monograph available for loan
    Pages: XII, 514 S.
    Series Statement: Mathematische Lehrbücher und Monographien : 2. Abt., Mathematische Monographien 52
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 3
    Monograph available for loan
    Monograph available for loan
    Vorlesungen über lineare Integralgleichungen (1962)
    Berlin : Dt. Verl. der Wiss.
    Associated volumes
    Details Availability
    Call number: O 2496(58) ; 3916
    In: Hochschulbücher für Mathematik
    Type of Medium: Monograph available for loan
    Pages: 211 S.
    Series Statement: Hochschulbücher für Mathematik 58
    Location: Upper compact magazine
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Branch Library: GFZ Library
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  • 4
    Monograph available for loan
    Monograph available for loan
    Variationsmethoden der mathematischen Physik : mit 7 Tabellen (1962)
    Berlin : Akad.-Verl.
    Details Availability
    Call number: O 2900 ; 7101
    Type of Medium: Monograph available for loan
    Pages: X, 464 S.
    Uniform Title: Variacionnye metody v matematiceskoj fizike
    Language: German
    Location: Upper compact magazine
    Location: Upper compact magazine
    Branch Library: GFZ Library
    Branch Library: GFZ Library
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  • 5
    Electronic Resource
    Electronic Resource
    Antiphase domain boundary formation in single-crystal chalcopyrite-structure ZnGeAs2 grown on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1531-1533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using transmission electron microscopy we have observed antiphase domain boundaries in single-crystal (001) ZnGeAs2 grown on vicinal (100) GaAs by organometallic vapor phase epitaxy. These antiphase domains boundaries pertain only to the cation sublattice of the chalcopyrite-structure ZnGeAs2 and are initiated at the heteroepitaxial interface because there exists a level of ordering on the cation sublattice in the ZnGeAs2 epitaxial film that is absent in the GaAs substrate. There are two possible types of displacement vectors characterizing these antiphase domain boundaries, and a zinc-blende-structure substrate orientation to eliminate the boundaries is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102304
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  • 6
    Electronic Resource
    Electronic Resource
    Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1952-1956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the epitaxial growth of single-crystal stoichiometric ZnGeAs2. The (001) ZnGeAs2 layers were deposited by organometallic vapor-phase epitaxy on (100) GaAs. The epitaxy has specular surface morphology. The stoichiometric chemical composition has been confirmed by x-ray diffraction, electron microprobe, and Auger electron spectroscopy. Selected-area electron diffraction patterns clearly indicate the chalcopyrite structure and that the [001] lattice direction is the growth direction. X-ray diffraction indicates that the c-direction lattice constant is 11.192 A(ring) for our epitaxial material, which is an elongation of 0.35% from the bulk material value of 11.153 A(ring). When stiffness constants for ZnGeAs2 are approximated by those of GaAs, this c-axis elongation can be explained by a contraction in the a direction induced by the 3.4×10−3 lattice mismatch between the ZnGeAs2 epitaxy and the GaAs substrate. Absorptance and transmittance measurements indicate that this material has a direct band gap of approximately 1.15 eV and agrees well with previously reported values. Hall measurements show that the material is p type with room-temperature hole mobilities up to 56 cm2 V−1 s−1 for a corresponding carrier concentration of 9×1018 cm−3. This mobility is slightly higher than previously reported for bulk material and attests to the high quality of this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342884
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3161-3163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of monolayer coverage, V/III flux ratio and growth rate on the density of three-dimensional growth induced isolated InAs islands grown on GaAs by molecular-beam epitaxy. Within the isolated island growth regime, increasing the monolayer coverage increases the InAs island density with only a small increase in island size. Decreasing the V/III flux ratio or decreasing the growth rate increases the island density without changing the average in-plane island diameter. We have observed island densities that are 80% of the ideal close-packed island density. We propose a model explaining the island density increase with monolayer coverage; local variations in accumulated strain in the wetting layer vary the point at which local islanding is initiated. As more material is deposited more islands are nucleated and the island density increases. The island density increases with decreasing V/III flux ratio or growth rate by increasing the adatom surface diffusion in the underlying wetting layer, leading to a more uniformly strain wetting layer and a more uniformly roughened growth front. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113709
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  • 8
    Electronic Resource
    Electronic Resource
    Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For InAs Stranski–Krastanov (SK) island growth on GaAs by molecular-beam epitaxy, we show that the in-plane island diameter varies exponentially with the growth temperature over the range of 390–540 °C. A transition region in SK growth between isolated island growth and island coalescing is investigated as functions of growth temperature and equivalent InAs layer-by-layer monolayer (ML) coverage in order to extend the isolated island regime for quantum confinement applications. InAs islands of 150 A(ring) in diameter have been grown. Growth of In0.5Ga0.5As islands indicates an increased 2D epitaxial region before island nucleation and a decreased island concentration compared to growth of InAs islands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113822
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  • 9
    Electronic Resource
    Electronic Resource
    Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1897-1899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A molecular beam epitaxy (MBE) growth-induced islanding process has been used to form self-organized multiple quantum dot layers, in which quantum dots from different layers are vertically aligned in columns and are electronically coupled. These structures are used as the active region in light-emitting diodes operating at room temperature. Light-emitting diodes are investigated using quantum dot columns containing single, 5 and 10 InAs quantum dots. These diodes emit light over a broad band with typical spectral linewidths of 120 nm, peaked between 1000 and 1100 nm. In addition to the quantum dot spectral feature, a spectral feature from a thin quantum well region, integral to the quantum dot formation process, is seen in the single quantum dot diode, but is eliminated in diodes with active regions containing columns of multiple quantum dots. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117614
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  • 10
    Electronic Resource
    Electronic Resource
    Psychoneuroendocrinological Effects on the Immune Response (1981)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Microbiology 35 (1981), S. 155-184 
    Details
    ISSN: 0066-4227
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.mi.35.100181.001103
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