Publication Date:
2019-07-13
Description:
Experimental measurements were made of solar cell and related photovoltaic parameters for silicon with high concentrations of dopant impurities. The cell output peaked for doping levels around 10 to the 17th power per cu cm. Independent measurements of diffusion length and open circuit voltage at high doping levels showed severe reductions at concentrations above 10 to the 18th power per cu cm. Theoretical reasons are given to explain these reductions. Indication is given of the problems requiring solution before increased cell output can be achieved at high doping levels.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
Institute of Electrical and Electronics Engineers, Photovoltaic Specialists Conference; May 06, 1975 - May 08, 1975; Phoenix, AZ
Format:
text
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