ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
With rapid solidification following pulsed laser melting, we have measured the dependence on interface orientation of the amount of solute trapping of several group III, IV, and V elements (As, Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The success of the model implies a ledge structure for the crystal/melt interface and a step-flow mechanism for growth from the melt. In addition, we have observed an empirical inverse correlation between the two free parameters ("diffusive speeds'') in this model and the equilibrium solute partition coefficient of a system. This correlation may be used to estimate values of these free parameters for other systems in which solute trapping has not or cannot be measured. The possible microscopic origin of such a correlation is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357728
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