Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 2479-2481
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical and materials properties of low-temperature oxide (LTO) covered tungsten and TiN films on polysilicon after a 1000 °C furnace anneal have been studied. The TiN was unaffected by the anneal. Its resistivity was a stable 42.5 μΩ cm, there was no reaction with the silicon or LTO, and adhesion was good. The tungsten films had 20% oxygen dissolved in the metal due to the LTO process. Upon annealing, oxygen diffused to the W-Si interface and produced a 120-A(ring) SiO2 film which lead to poor adhesion and electrical contact. Deposition of a 200-A(ring) tantalum film between the W and the LTO helped to solve this problem.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339457
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