ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition(PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen isincorporated into the SiN film, and the passivation properties of the resulting SiNx:H layersplay an important role in enhancing the energy conversion efficiency of solar cells. It isbelieved that the Hydrogen present in SiNx:H is responsible for this enhancement, andtherefore its concentration in the passivating layer is an important parameter. The Hydrogencomposition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured byelastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2,generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously,Rutherford backscattering (RBS) spectra were recorded for each sample. The results showthat the Hydrogen concentration in the SiNx:H layers is dependent of the depositionconditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:Hlayer thickness, and the SiNx:H/Si interfaces were well defined
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3551.pdf
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