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  • 1
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in gallium nitride (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1818-1821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an ensemble Monte Carlo simulation of the electron transport in gallium nitride (GaN) are presented. The calculation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. An analytic expression for the polar optical momentum relaxation time for phonon energies larger than the thermal energy is also derived. This expression applies to many wide-gap semiconductors, such as GaN and SiC, at room temperature since these semiconductors have large polar optical-phonon energies (on the order of 100 meV). The calculated mobility agrees well with the results of the Monte Carlo calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354787
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6726-6730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the gate leakage current fluctuations on noise properties of AlGaN/GaN heterostructure field effect transistors (HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). The comparison of the noise properties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate current noise to the HFET's output noise. The effect of the gate current fluctuations on output noise properties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a relatively large leakage current Ig (Ig/Id∼10−3–10−2, where Id is the drain current) does not contribute much to the output noise. In HFETs with a relatively small values of α (α∼10−5–10−4), the contribution of the leakage current to output noise can be significant even at Ig/Id∼10−4–10−3. For such transistors, a very rapid increase of the 1/f noise with gate bias was observed. The differences in the noise behavior can be linked to the material quality of the AlGaN and GaN layers in different types of HFETs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321790
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  • 3
    Electronic Resource
    Electronic Resource
    Piezoresistive effect in AlN/GaN short range superlattice structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6932-6934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a strong piezoresistive effect in AlN–GaN short-range superlattices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially larger than the values of the gauge factor reported for GaN–AlN–GaN semiconductor–insulator–semiconductor structures. The measured data are in good agreement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN–GaN-based materials for the development of piezoelectric and piezoresistive sensors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370109
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  • 4
    Electronic Resource
    Electronic Resource
    1/f noise in pentacene organic thin film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5395-5399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-contact TFTs. The Hooge parameter values were in the range of 5–20 for the bottom-contact TFTs. We estimated that the contact noise could be comparable to the channel noise for both top-contact and bottom-contact TFTs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314618
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  • 5
    Electronic Resource
    Electronic Resource
    Modeling of organic thin film transistors of different designs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6594-6597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323534
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  • 6
    Electronic Resource
    Electronic Resource
    Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3. Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372364
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  • 7
    Electronic Resource
    Electronic Resource
    Polar optical-phonon scattering in three- and two-dimensional electron gases (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 657-660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of the polar optical momentum relaxation time for phonon energies larger than the thermal energy is applied to the analytical calculations of the electron mobility in bulk GaAs and in a two-dimensional (2D) electron gas. The theory also accounts for nonparabolicity. For the bulk material, the analytical formula is in good agreement with experimental data even at elevated temperatures where it can be used as an extrapolation formula. The comparison with numerical simulations for the 2D gas shows that the analytical formula for the 2D case applies when intersubband scattering is unimportant. When many subbands are involved in scattering processes, the polar optical mobility can be estimated using the analytical formula for the bulk case. Hence the results provide convenient analytical equations for polar optical mobility which can be used in device simulators. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359051
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3691-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated the elastic strain relaxation in wurtzite GaN–AlN–GaN semiconductor–insulator–semiconductor (SIS) structures. Elastic strain tensor components, elastic energy, the density of the misfit dislocations, and the other parameters of the system were obtained as functions of the AlN layer thickness. Theoretical values of the elastic strain relaxation are in satisfactory agreement with experimental data extracted from the capacitance-voltage (C-V) characteristics of GaN–AlN–GaN SIS structures. Our results confirm that the gradual relaxation process starts from 30 A(ring) AlN film thickness. The uniform contributions to the elastic strain tensor components decrease by approximately an order of magnitude when the film thickness increases from 30 to 100 A(ring). Commensurate with this decrease is an increase in a nonuniform contribution of the misfit dislocations. The dislocation interactions lead to redistribution of dislocations within the 30–60 A(ring) range of AlN film thicknesses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359947
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  • 9
    Electronic Resource
    Electronic Resource
    Hall factor for ionized impurity scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2846-2847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an interpolation formula which describes the dependence of the Hall factor for impurity scattering in semiconductors on the carrier concentration and temperature with sufficient accuracy for practical calculations. This formula applies to semiconductors with an arbitrary degree of degeneracy which makes it especially useful for the interpretation of the measured temperature dependencies of a Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360085
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  • 10
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics of strained piezoelectric structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1616-1620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental and theoretical studies are presented of the current-voltage characteristics of symmetrically doped n-type GaN-AlN-GaN semiconductor-insulator-semiconductor (SIS) structures. The asymmetry caused by the strain-induced electric field leads to the depletion layer barrier in addition to the barrier presented by a thin insulating layer of AlN. It is shown that the tunnel current depends on the degree of the elastic strain relaxation which, in turn, is related to the AlN film thickness. This dependence provides quantitative information about the film relaxation. This characterization technique is compared with the capacitance-voltage characterization of the SIS structures. The data indicate that the low bound of the conduction-band offset for the AlN/GaN heterointerface is close to 1 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358916
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