Publication Date:
2019-07-13
Description:
In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved.
Keywords:
Instrumentation and Photography
Type:
NASA/CR-97-207744
,
NAS 1.26:207744
,
Transactions on Electron Devices (ISSN 0018-9383); 44; 1; 45-50
Format:
application/pdf
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