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  • 1
    Electronic Resource
    Electronic Resource
    Nitrogen-doping effects on electrical, optical, and structural properties in hydrogenated amorphous silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6729-6737 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical, optical, and structural properties of nitrogen-doped hydrogenated amorphous silicon films with the N content up to about 12 at. % are systematically studied using electrical conductivity measurements, electron-spin resonance, light-induced electron-spin resonance, constant photocurrent method, optical absorption spectrophotometry, IR absorption spectroscopy, Raman scattering spectroscopy, and x-ray photoelectron spectroscopy. Both behaviors of the dark conductivity and the charged-dangling-bond density against the N content suggest that most of charged dangling bonds originate from potential fluctuations. Only part of charged dangling bonds created by the N doping up to 2 at. % originate from positively charged fourfold-coordinated N. The decay behavior of the photoconductivity after turning off the probing light also supports that most of charged dangling bonds in N-doped hydrogenated amorphous silicon do not originate from positively charged fourfold-coordinated N. A possible origin of potential fluctuations is increased fluctuations in the net electron density at Si sites accompanying structural randomness caused by the N doping. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365215
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of light soaking on surface- and bulk-spin densities in hydrogenated amorphous silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1230-1234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the influence of light soaking on surface- and bulk-spin densities in hydrogenated amorphous silicon (a-Si:H) films, we have measured the spin density in the films with thicknesses ranging from 0.02 to 3.9 μm as a function of light-soaking time. It is found that the total spin density in films thinner than 0.1 μm approaches the steady state spin density within a few hours and is increased by only a factor of 2–3 after 12 h strong illumination with light intensity of 3.8 W/cm2. However, for the films thicker than 0.7 μm, the total spin density does not show a tendency to approach the steady state value and is increased by a factor of 10. Furthermore, in order to describe the spatial distribution of the spin density, a simulation, in which the total spin density is composed of the surface-spin density and the bulk-spin density, is carried out. The calculated spatial distribution further supports that light soaking increases the surface-spin density by a factor of 2–3, but the bulk-spin density by a factor of 25 if the bulk-spin density for the annealed state is taken as 4×1015 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360363
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  • 3
    Electronic Resource
    Electronic Resource
    Surface and bulk defects in hydrogenated amorphous silicon and silicon-based alloy films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5045-5049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface and bulk defects in a-Si:H, a-Si1−xCx:H, and a-Si1−xNx:H films were investigated by electron spin resonance (ESR) and constant photocurrent method. The thickness of the surface defective layer in a-Si:H films was determined for the first time by ESR. Applying various surface treatments, the free-surface layer proved to be much more defective than the interface layer. Both surface and bulk defect densities in a-Si1−xCx:H and a-Si1−xNx@B:H alloy films were also determined by ESR. The origin of the surface states is discussed, and the experimental results are explained by a simplified model of the distribution of surface defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342458
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  • 4
    Electronic Resource
    Electronic Resource
    Interface structure of a-Si:H/ZnS multilayer films elucidated from electron-spin resonance and infrared-absorption measurements (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4739-4746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer films consisting of hydrogenated amorphous silicon and zincsulfide (a-Si:H/ZnS) were prepared by glow-discharge decomposition of silane gas and diethylsulfur-diethylzinc gas mixture. Since a-Si:H/ZnS multilayer films do not have Si atoms in their barrier layer, they have an advantage of easy characterization of the a-Si:H well layer by using electron-spin resonance and infrared absorption. These measurements revealed that in an interface region within a distance of 10 nm from the interface, H atoms in a-Si:H are incorporated in the form of dihydride rather than in the form of monohydride. In accordance with the H bonding scheme, it was also found that the interface region in a-Si:H within a distance of several nanometers from the interface has a large Si dangling bond density of the order of 1018 cm−3. Transport properties in these films were also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343226
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  • 5
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of lead-zirconate-titanate films prepared by laser ablation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2910-2912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric lead-zirconate-titanate (PZT) thin films have been deposited by excimer laser ablation on sapphire substrates with and without an electrode. In preparation for the films, O2 gas pressure has greatly influenced the film structure and morphology. For the first time, we have confirmed the ferroelectric properties of PZT films prepared by laser ablation without post-annealing. It appears to be possible to use these films for nonvolatile random access memories with some additional improvements in the film properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104719
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  • 6
    Electronic Resource
    Electronic Resource
    Nitrogen doping in hydrogenated amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5086-5089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping effect of N in hydrogenated amorphous silicon (a-Si:H) is studied. The absence of a thickness dependence of the conductivity of N-doped samples provides convincing evidence that the doping effect of N in a-Si:H is a bulk property. The similarity between the effect of N doping and that of P doping found in the conductivity and the photoconductivity decay indicates that N can act as an effective donor in a-Si:H and that N doping is also of substitutional type; however, the solid-phase doping efficiency of N is estimated to be at least three orders of magnitude lower than that of P.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354293
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal equilibrium process in undoped hydrogenated amorphous silicon and silicon-carbon alloy films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 622-624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (a-Si1−xCx@B:H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperature-dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190 °C for hydrogenated amorphous silicon to 150 °C for a-Si0.82C0.18@B:H. Possible microscopic mechanisms for the observed thermally induced defects in a-Si1−xCx@B:H alloys are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99384
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  • 8
    Electronic Resource
    Electronic Resource
    Spatial distribution of light-induced defects in hydrogenated amorphous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deduced the spatial distribution of defects in light-soaked hydrogenated amorphous silicon (a-Si:H) from the thickness dependence of the areal defect density using a large number of film thicknesses, ranging from 0.05 to 8.7 μm. The light soaking was done with strong white light generated by a Xe lamp with an infrared-cut filter and the defects were measured using electron spin resonance. The distribution of defects is found to be highly nonuniform and has an inverse power-law form Nv(x)=Ax−α, where Nv(x) is the defect density at depth x measured from the surface, and A and α (≈0.6) are constants and depend on the light-soaking time. Our results show unambiguously that the Staebler–Wronski effect is a bulk effect, however the regions close to the surface are affected much more by light soaking than the regions deep in the bulk of the sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114118
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  • 9
    Electronic Resource
    Electronic Resource
    Synthesis of ferromagnetic Bi-substituted yttrium iron garnet films by laser ablation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 237-239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth-substituted yttrium iron garnet (Bi:YIG) films were deposited on gadolinium gallium garnet substrate by laser ablation using the ArF excimer laser. This is the first report on the preparation of Bi-substituted YIG films by laser ablation. Films have a garnet single phase above the substrate temperature of 490 °C, and the film composition does not deviate largely from the target composition and it is almost constant in the temperature range between 490 and 580 °C. The saturation magnetization of the film is 1500 G at room temperature. Faraday rotation angle θF at a wavelength of 830 nm at room temperature is −0.3×104 °/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105977
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2718-2720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bilayer structures composed of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-Si3N4:H) are prepared on fused-quartz substrates and their interfacial Si dangling bonds (DBs) are evaluated by electron spin resonance (ESR). The ESR study reveals that the bottom nitride (BN) structure (a-Si:H/a-Si3N4:H/fused quartz) has a smaller amount of neutral DBs in the interface than the top nitride (TN) structure (a-Si3N4:H/a-Si:H/fused quartz). The photoconductivity measurements also support this finding. A larger amount of charged DBs in the interface, however, exist in the BN structure than in the TN structure. The larger amount of interfacial neutral DBs in the TN structure is likely to be caused by the UV irradiation from the plasma during the deposition of a-Si3N4:H layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113499
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