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  • 1
    Electronic Resource
    Electronic Resource
    Radiation damage behavior of LiNbO3 crystal by MeV F ion implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1625-1628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X, Y, and Z crystalline cut LiNbO3 crystals were implanted by 1.0 MeV F ions with a dose of 1×1015 ions/cm.2 The virgin and implanted LiNbO3 crystals were investigated using the Rutherford backscattering/channeling technique. The obtained minimum yields of virgin crystals were 4%, 8%, and 6% for X-, Y-, and Z-cut LiNbO3 crystals, respectively, because of their different arrangements of lattice sites in channeling direction. The measured damage profiles are also influenced by the arrangement of lattice sites in channeling measurements. The damage profiles of X-cut LiNbO3 crystal induced by 1.0 MeV F+ at a fluence range of 1×1014–3×1015 ions/cm2 have been studied and compared with the Transport of Ions in Matter, version 1990 calculation. It has been found that not only the nuclear energy deposition but also the electronic energy deposition influences the defect production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354811
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4003-4006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 80–100 keV Ar+, 200 keV Xe+, and 200 keV Hg+ were implanted into Si3N4 films under angles of 0°, 45°, 60°, and 75°. Both normal and oblique incidence Rutherford backscattering of 2.1 MeV He ions have been used to study tilted angle implantation, i.e., the lateral spread of Ar, Xe, and Hg ions in the Si3N4 films. The results extracted are compared with the simulation of transport of ions in matter (TRIM'89 code). The experimental lateral spread seems to be in good agreement with the TRIM'89 prediction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352252
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  • 3
    Electronic Resource
    Electronic Resource
    Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3975-3978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mercury ions were implanted in amorphized potassium titanyl phosphate (KTiOPO4) in the range of 50–400 keV. The implanted depth distribution was measured by Rutherford backscattering of 2.1 MeV He ions. The mean projected ranges and range stragglings obtained are compared with our calculation based on Biersack's angular diffusion model and Monte Carlo simulation. The results show that the experimental mean projected range is in good agreement with the calculated value within the experimental errors but the range straggling is systematically higher than the calculated value. However, significant deviations from the transport of ions in matter (TRIM'89) prediction for mean projected range and range straggling are found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346258
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of lateral straggling of Xe ions in potassium titanyl phosphate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7222-7224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 150 keV Xe ions were implanted in potassium titanyl phosphate (KTP) at different angles of 0°, 45°, 60°, and 75°. The lateral straggling of Xe ions in KTP was investigated by normal and oblique incidence Rutherford backscattering of 2.1 MeV He ions. The result extracted is compared with the Monte Carlo code TRIM'89. The lateral straggling is seemed to be in a good agreement with TRIM'89 simulation within experimental error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352396
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  • 5
    Electronic Resource
    Electronic Resource
    Lattice disorder in LiNbO3 crystals induced by MeV Cu+ implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 899-903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of 1 MeV Cu ion implantation in LiNbO3 crystals have been investigated using the Rutherford backscattering/channeling technique. The samples have been implanted with doses ranging from 5×1014 ions/cm2 to 2×1015 ions/cm2. The damage profiles have been deconvoluted from Rutherford backscattering spectra after considering the energy spreading due to difference of stopping power between nonchanneled and channeled particles. The energy dependence of the scattering cross section and stopping power have also been taken into account. The damage profiles have compared with TRIM'89 (Transport of Ions in Matter, version 1989) code calculation. For the lowest dose (5×1014 ions/cm2) implantation, the damage profile is in agreement with the defect profile calculated using the trim code. The damage peak is located shallower than the theoretical ion mean projected range, but the damage spread is larger than the ion spread. For higher dose implantations, a broadening of the damage profiles is observed, probably due to radiation enhanced defect migration during ion implantation. For doses higher than 2×1015 ions/cm2, an amorphous layer will be observed in the LiNbO3 crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351765
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  • 6
    Electronic Resource
    Electronic Resource
    Depth profiles of Xe ions at energies from 50 to 500 keV in ladderlike polyphenylsilsesquioxane (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3187-3190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Xe ions at energies from 50 to 500 keV have been implanted into the polymer ladderlike polyphenylsilsesquioxane ([(C6H5)8Si8O12]n). The corresponding depth profiles have been measured by 2.1-MeV 4He++ Rutherford backscattering. The experimental data were compared with our calculation based on Biersack's angular diffusion model and Monte Carlo simulation. The results show that a good agreement is found between the experimental data and calculated values for the mean projected range, but significant deviations from theoretical values are observed for range straggling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346367
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  • 7
    Electronic Resource
    Electronic Resource
    Distributions of implanted Fe ions in quartz crystal and silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3191-3193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distributions of implanted Fe ions into both amorphized quartz crystal (SiO2) and silicon at energies of 100, 150, and 200 keV were studied by the Rutherford backscattering technique. The obtained projected ranges and range stragglings are compared with our calculated values based on an angular diffusion model and transport of ions in matter predictions. Good agreement is obtained between calculated and experimental values for projected range and range straggling in both cases within experimental error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346368
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  • 8
    Electronic Resource
    Electronic Resource
    Monomode optical waveguide in lithium niobate formed by MeV Si+ ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5224-5226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. LiNbO3 crystals were implanted with 3 MeV Si+ ions to doses around 1014 ions/cm2. After annealing, the waveguides were formed by the extraordinary refractive index enhancement in the waveguide regions. The effective extraordinary refractive index of the waveguide increased with ion implantation dose. The loss was 0.64 dB/cm in the X-cut sample with an implantation dose of 3.3×1014 ions/cm2. The scattering loss in the Z-cut samples was even lower than that in the X-cut samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367312
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  • 9
    Electronic Resource
    Electronic Resource
    MeV P ion implantation damage and rapid thermal annealing effects in Fe-doped InP using Raman scattering (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2127-2131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage in Fe-doped InP induced by 1.0 MeV P ion implantation with doses ranging from 5×1013 to 2×1015 cm−2 and effects of rapid thermal annealing (RTA) in the range of 700-1050 °C were investigated by means of Raman scattering. The shift and asymmetrical broadening of the longitudinal optical phonon peak (LO) and the appearance of a transverse optical mode (TO) show that the Raman scattering is very sensitive to implantation damage. For doses larger than 5×1014 cm−2, the TO and LO peaks were markedly broadened, even merged into a single peak, indicating an amorphous structure in the near surface region. Much of the primary damage can be annealed out after RTA at 800 °C for all implantation doses. For RTA below 900 °C, the residual damage decreased with increasing annealing temperature for the low dose case of 1×1014 cm−2, but increased for the high dose case of 2×1015 cm−2. Only when the annealing temperature is over 900 °C, the residual defects of the high dose case drastically decrease, and nearly full recovery is obtained when the annealing temperature is raised to 1000–1050 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363106
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  • 10
    Electronic Resource
    Electronic Resource
    Range profiles of 600–1200 keV Xe+ implanted in KTiOPO4 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2104-2108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 600–1200 keV Xe+ were implanted into KTiOPO4 (potassium titanyl phosphate) in increments of 100 keV. The depth distributions of implanted Xe+ in KTiOPO4 were measured by Rutherford backscattering. The effects of channeling, temperature, and dose on the depth distribution were briefly investigated. All range distributions were nearly Gaussian. The mean projected range and range straggling obtained were compared with the TRIM'91 code, projected range algorithm (PRAL) and Wang and Shi's (WS) calculation procedure based on Biersack's angular diffusion model. The results show that TRIM'91 systematically underestimates the projected range by approximately 25%, PRAL underestimates the range by approximately 28%, and WS underestimates the range by approximately 7%. All calculate the underestimated range straggling by approximately a factor of two.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357621
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