ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Galvanomagnetic effects were investigated in gapless and narrow-gap semiconductors of the form Hg1−x MnxTe1−y Sey with x=0.03–0.11, y=0.01–0.10 (−150〈ɛ g 〈190)meV and acceptor concentration 5.4×1016〈N A 〈4.3×1018 cm−3. In magnetic fields H=5–50 kOe and at T=1.3–4.2 K, the observed hole concentration p=1/eR was found to increase by a substantial factor (of up to 500). This was accompanied by a fall in the longitudinal (ρ zz ) and transverse (ρ xx ) magnetoresistivities. The hole “boil-off” is assumed to be a consequence of the existence at H=0 of a bound magnetic polaron and the delocalization of carriers when these states are destroyed by the external magnetic field. The anomalous ratio of longitudinal-to-transverse resistivities (ρ zz 〉ρ xx ), observed at liquid-helium temperatures and in magnetic fields H〉10 kOe, is explained in terms of the properties of the energy spectrum of the valence band of semimagnetic semiconductors in quantizing magnetic fields.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187019
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