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  • 1
    Electronic Resource
    Electronic Resource
    Ion yields in hydrocarbon liquids exposed to x-rays of 5-30-keV energy (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 2909-2913 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100259a040
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  • 2
    Electronic Resource
    Electronic Resource
    Observations on the surface and bulk luminescence of porous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6335-6340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the x-ray excited optical luminescence technique, we have investigated the soft x-ray induced photoluminescence of porous silicon in the optical region (200–900 nm) and the Si K-edge x-ray absorption fine structures of porous silicon in the near edge region. It is found that while porous silicon prepared at low current density (20 mA/cm2 for 20 min) exhibits a single broad luminescence band, porous silicon prepared at high current density (200 mA/cm2 for 20 min) exhibits three optical luminescence channels; i.e., in addition to the broad peak characteristic of all porous silicon, there are at least two additional optical luminescence channels at shorter wavelengths, one with modest intensity at ∼460 nm and the other a weak and very broad peak at ∼350 nm. These optical channels have been used to monitor the Si K-edge absorption of porous silicon in the near edge structure region. Analysis of the data shows that while the band at ∼627.5 nm corresponds to the bulk emission, the other channels are of a surface origin. These observations and their implications are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355156
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  • 3
    Electronic Resource
    Electronic Resource
    Ru L-edge x-ray absorption studies of the formation of Ru–Cu bimetallic aggregates on Cu(100) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 8725-8731 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: X-ray absorption measurements at the Ru L3 edge have been used to study the adsorption of Ru3(CO)12 on Cu(100) surfaces at submonolayer and monolayer coverages and the subsequent formation of Ru–Cu bimetallic aggregates at these surfaces. The analysis of the Ru L3 edge x-ray absorption near edge structure (XANES) reveals (a) the surface Ru–Cu bimetallic aggregates are three dimensional clusters of which the Ru atoms are in the "bulk'' and the surface of the cluster is covered with Cu atoms, and (b) relative to pure Ru metal, Ru in the bimetallic aggregates gains d character. The chemical properties of these bimetallic surfaces and the effect of the cluster size on their electronic properties revealed by XANES as well as LEED and Auger are also reported. These results are compared with previous results of Ru3(CO)12/Cu(111). The implications of these observations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461208
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  • 4
    Electronic Resource
    Electronic Resource
    Photoemission studies of Ru3(CO)12 adsorption and formation of Cu–Ru bimetallics on Cu(111) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 6250-6255 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on Cu(111) and its decomposition products induced by electron irradiation and annealing are reported. It is found that electron bombardment and subsequent annealing of Ru3(CO)12/Cu(111) lead to the formation of Cu–Ru bimetallic aggregates which exhibit similar features as those reported previously on polycrystalline Cu, that is that Ru–Cu aggregates are formed of which Ru atoms are at the core and the surface is wetted with Cu and there exist distinct interface states. The mechanism for the formation of the bimetallic Cu–Ru aggregates on Cu(111) is almost certainly one in which two-dimensional Ru aggregation occurs on the surface upon initial annealing (∼225 °C) followed by three-dimensional aggregation and wetting of the Ru cluster surface by Cu after further annealing at higher temperatures ((approximately-greater-than)450 °C). The interaction between Ru surface intermediates and Cu(111) before Cu wetting occurs is also examined with photoemission and SW–Xα calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.460414
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic structure of Cs multilayer and monolayer adsorbed on Ru(001): A photoemission study (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1188-1194 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic structure of Cs adsorbed on Ru(001) at multilayer and monolayer coverages has been investigated with high resolution photoelectron spectroscopy (PES) using synchrotron radiation. It is found that at multilayer coverage, the electron distribution curve (EDC) of the Cs overlayer is essentially the same as that of the Cs metal reported previously except that, with the high resolution, a surface atom core-level (Cs 5p3/2) binding-energy shift of +0.24 eV is observed for the first time. It is also found that at monolayer coverage which exhibits a ( 7/8 × 7/8 )-R30° LEED pattern, the Cs 5p3/2 level shifts by 1.0 eV to lower binding energy relative to that of the multilayer; this shift is accompanied by a significant linewidth broadening and a nearly complete suppression of O3VV Auger emission. These results are interpreted on the basis of the volume effect and a rehybridization mechanism in which the compression of the Cs atom and the interplay of conduction and 5d electrons at the Cs site are crucial to the 5p binding energy shift, core hole lifetime, and Auger transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455229
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  • 6
    Electronic Resource
    Electronic Resource
    Layer resolved spectroscopy of potassium adsorbed on a Ru(001) surface: Photoemission and thermal desorption study (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5786-5792 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-resolution photoemission spectroscopy and thermal desorption were used to study the coverage dependence of the K 3p3/2,1/2 core levels of K overlayers on Ru(001). Three doublets were observed to evolve sequentially and to shift to higher binding energy with increasing coverage of potassium. The doublets were assigned to photoemission from the interface (first layer), "bulk'' (second layer), and surface (third layer). Spin–orbit splitting was observed for the first time in the condensed potassium phase by photoemission. The results are discussed in terms of the equivalent core approximation using a Born–Haber cycle. In the thermal desorption data three coverage regimes can be distinguished: a first layer desorbing with first-order kinetics and a strongly decreasing heat of adsorption (EA =2.80–0.87 eV); a second layer with zero-order desorption kinetics and EA =0.78 eV; a third layer and multilayers with the same kinetic order but with EA increasing from 0.78 to 0.93 eV, which is close to the heat of sublimation of potassium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457531
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  • 7
    Electronic Resource
    Electronic Resource
    Photoemission studies of Ru3(CO)12 adsorption on Cu3Au (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4447-4452 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photoemission spectra of Ru3(CO)12 adsorbed on polycrystalline ordered and disordered Cu3Au surfaces and its decomposition products induced by zero order light and electron bombardment are reported. The results are compared with multiple-scattering–X-alpha (MS–Xα) calculations and recent studies of Ru3(CO)12 on Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458727
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  • 8
    Electronic Resource
    Electronic Resource
    Nanostructured CdS prepared on porous silicon substrate: Structure, electronic, and optical properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6038-6043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanostructured CdS was deposited electrochemically on porous silicon (PS) substrate/cathode. The PS-supported CdS deposits were found to be uniformly packed particles of ∼100 nm, each of which is an aggregate of smaller clusters of several nanometers as revealed by scanning electron microscope and confirmed by glancing incidence x-ray powder diffraction. No significant CdS deposition into the pore of porous silicon is found under the reported experimental conditions. X-ray absorption fine structures (XAFS), both extended x-ray absorption fine structure and x-ray absorption near edge structures, across the S and the Si K edge of the samples have been investigated. The structure and electronic properties of the CdS/PS composite are discussed on the basis of the XAFS results obtained using multichannel detection (total electron and x-ray fluorescence yields) from a series of CdS and PS samples. The optical luminescence behavior of CdS/PS was also investigated utilizing a technique often referred to as synchrotron x-ray excited optical luminescence (XEOL). By selecting excitation photon energies near the Si and the S K edge, the luminescence originated from both CdS and PS can be distinguished in the XEOL spectra. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461888
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L3,2 edge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6379-6383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption fine structures (XAFS) and electron energy loss spectroscopy (EELS) at the Si L3,2 edge have been used to investigate a series of Si nanowires (as-prepared and HF refreshed). X-ray excited optical luminescence (XEOL) was also used to study the optical properties of these Si nanowires. Although no noticeable edge-jump blueshift (widened band gap) is observed in XAFS, a noticeable change in the edge jump (a less steep rise and the blurring of spectral features) is observed, indicating considerable degradation in the long-range order and size effects. However, EELS with a nanobeam exhibits a threshold blueshift and parabolic behavior for some selected wires indicating that there are grains smaller than the nominal diameter in these nanowires. Thus, XAFS probes the average of a distribution of wires of various sizes of which the majority is too large to exhibit detectable quantum confinement behavior (blueshift) observed and inferred in EELS and XEOL. The results and their implications are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1417997
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  • 10
    Electronic Resource
    Electronic Resource
    Electron and x-ray fluorescence yield measurements of the Cu L2,3-edge x-ray absorption fine structures: A comparative study : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1528-1530 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Cu L2,3-edge x-ray absorption fine structures (XAFS) of a series of Cu samples have been recorded at the BL1A beamline of UVSOR using both electron yield and x-ray fluorescence yield techniques. XAFS measurements were simultaneously recorded in three modes: total electron yield (TEY) with specimen current, total electron yield with a channeltron electron multiplier and x-ray fluorescence yield (FLY) with an Ar/CH4 gas proportional counter. While both TEY measurements produce essentially identical spectra, a comparison between TEY and FLY results shows a drastic difference in the sensitivity of the techniques towards sampling depth. These results and their implications are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145899
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