ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)-doped 6H-SiC crystals at low temperatures. Admittance spectra taken on Schottky contacts ofhighly doped samples (NA ≥ 7.2×1017 cm-3) reveal two series of conductance peaks, which causetwo different slopes of the Arrhenius plot. The steep slope is attributed to the Al acceptor, while theflatter one - obtained from the low temperature peaks - is attributed to the activation energy ε3 ofnearest neighbor hopping. We propose a model, which explains the unexpected sharpness of thelow temperature conductance peaks and the disappearance of these peaks for low acceptorconcentrations. The model is verified by simulation, and the AS results are compared withcorresponding results obtained from resistivity measurements taken on 4H- and the identical 6HSiCsamples
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.367.pdf
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