Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 3932-3935
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The three-level and spectroscopic charge pumping techniques, deep level transient spectroscopy and capacitance-voltage measurements are both used to determine the energy distribution of Si–SiO2 interface states on submicrometer metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor capacitors. This study is a systematic comparative analysis between charge pumping techniques and capacitance measurements. The measurements have been performed on different structures (n- and p-type materials, low and high interface states densities) and the performances of each technique have been compared.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354493
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