ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract A study of the synthesized Ge22.5Bi7S70.5 glassy system has been carried out. Differential thermal analysis data indicate the retention in the as-quenched sample of two amorphous phases. Thermal conductivity, ψ, measurements on bulk sample reveal that the main contribution to ψ is due to phonon thermal conductivity. Thermal evaporation of the synthesized ingot gives films with Ge20.7Bi6.8S72.5 as composition. The values of the activation energy and the pre-exponential factor calculated from the direct current electrical conductivity above 53 °C suggest that carrier conduction occurred between extended states in these films. The I–V characteristics in the off-state and the switching phenomenon are investigated. A memory switch with a threshold voltage decreasing with temperature is detected for the studied films. Optical parameters such as absorption coefficient, optical gap and refractive index are also determined. Comparison with binary Ge–S glass reveals that the addition of Bi introduces additional absorbing states at band edges. © 1998 Kluwer Academic Publishers
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1004437325612
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