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  • 1
    Electronic Resource
    Electronic Resource
    In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1276-1280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 1018 oxygen atoms cm−3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350336
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  • 2
    Electronic Resource
    Electronic Resource
    Nonimaging characterization of imperfect single crystals by means of a three-crystal diffractometer for high energy synchrotron radiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3680-3684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-crystal diffractometer for synchrotron radiation with energies of 100 keV and higher has been used in a nondispersive setting to map out the distribution of Bragg scattered intensity in the scattering plane with very high resolution. By using perfect silicon crystals in symmetrical Laue geometry for reflection 220 as monochromator and analyzer, respectively, a resolution of ≈2×10−4 A(ring)−1 in the direction parallel to the reciprocal lattice vector G220 and of ≈10−5 A(ring)−1 in the direction perpendicular to G220 has been achieved at high counting rates. As a first example the mosaic structure of a plastically deformed silicon crystal has been characterized with respect to its mosaic distribution and lattice parameter fluctuations. Second, the study of a silicon-germanium gradient crystal, produced by means of the chemical vapor deposition technique, demonstrated that the substrate peak could be well separated from the intensity distribution of the gradient crystal. A two-dimensional contour plot of the intensity distribution in the vicinity of 220 shows the variation of the lattice parameters in the gradient crystal, as well as the lattice plane tilts of the substrate and the silicon-germanium layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352927
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  • 3
    Electronic Resource
    Electronic Resource
    (γ,eγ) spectroscopy: A new technique to determine electron momentum densities of solids (invited) : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1119-1124 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the past γ-ray Compton scattering experiments proved their value for the investigation of many-body effects in the electronic structure of solids by measuring the projection of the electron momentum density onto the scattering vector, the so-called Compton profile. Due to the availability of modern synchrotron radiation facilities the momentum resolution of the technique was improved substantially and, by using circular polarized photons, "magnetic'' Compton profiles could be determined in ferromagnetic materials. A new approach, where the Compton scattered photon is measured in coincidence with the recoiling electron, allows for a direct determination of electron momentum densities in solids. This (γ,eγ) scattering technique will reach its full potential once synchrotron radiation from undulators in electron storage rings operating at energies above 10 GeV will be available.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143111
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  • 4
    Electronic Resource
    Electronic Resource
    Diffraction of high-energy synchrotron radiation (invited) (abstract) : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1614-1614 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diffraction of high-energy synchrotron radiation at energies above 100 keV combines advantages of conventional x-ray diffraction and neutron diffraction. For hard x rays absorption in matter is weak with typical mean free paths of several millimeters. Bulk properties are studied on large samples. With a three-crystal diffractometer an excellent k-space resolution of about 10−5 A(ring)−1 transversal and 10−4 A(ring)−1 longitudinal is achieved. In this contribution the particularities of hard x rays, the instrumental setup, and the k-space resolution are discussed and presented. The potential of the new method will be demonstrated on two examples: magnetic diffraction from MnF2 and the structural phase transition of SrTiO3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146465
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  • 5
    Electronic Resource
    Electronic Resource
    Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 553-562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects due to oxygen precipitation in Czochralski grown silicon single crystals annealed for 216 h at 750 °C and with oxygen concentration varying between 18 and 12×1017 atoms per cm3 (according to DIN 50438) were studied by means of small angle neutron scattering and γ-ray diffractometry probing the same volume elements in the sample. The size and the shape of the SiO2 precipitates were determined by means of small angle neutron scattering. In the center of the disk-shaped sample of 10 cm diameter one finds spherical precipitates with a radius of ≈20 A(ring), at the border the precipitates are of plate-like shape, ≈146×146×41 A(ring) in dimension. The k-space distribution of the diffuse scattering caused by the strain field of the SiO2 precipitates has been determined by means of a double-crystal diffractometer and 316 keV γ radiation. Modeling with Huang and Stokes–Wilson theory suggests that the relatively small SiO2 precipitates are loosely bound in larger clusters with a radius of ≈2000 A(ring) in which the crystal matrix is strongly distorted. With the γ-ray diffractometer operated in the single-crystal mode the thickness dependence of the integrated reflecting power was measured from which the static Debye–Waller factor for the 2 2 0 reflection is determined using statistical dynamical theory. The results confirm qualitatively the cluster model. In the center of the sample the size of the precipitates could be calculated by additional measurement of the static Debye–Waller factor of the 4 4 0 reflection. The result is in excellent agreement with the small angle neutron scattering data. Combining all the experimental data taken in the oxygen rich center of the annealed silicon crystal the average distance between the centers of the SiO2 precipitates in the clusters is ≈80 A(ring) and the distance between the large clusters is ≈40 000 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359039
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  • 6
    Electronic Resource
    Electronic Resource
    Quantitative aspects of ion exchange partition of redox cations into organosilane-styrenesulfonate copolymer films on electrodes (1982)
    s.l. : American Chemical Society
    Analytical chemistry 54 (1982), S. 1508-1515 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00246a014
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  • 7
    Electronic Resource
    Electronic Resource
    Three-crystal spectrometer for 150-keV synchrotron radiation : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2398-2401 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A triple-axis spectrometer for high-energy ((approximately-greater-than)150 keV) synchrotron radiation has been constructed and characterized. The reciprocal space resolution function of this instrument has been measured using perfect silicon crystals as monochromator, sample, and analyzer. It was found to have dimensions of 1.0×10−5 A(ring)−1 and 2.3×10−4 A(ring)−1 in the directions perpendicular and parallel to the momentum transfer Q, respectively, comparable to those achievable using standard 8-keV triple-axis instruments. The large penetration depths of high-energy x-ray photons, combined with the high instrumental resolution, opens new possibilities in the study of truly bulk condensed matter systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141060
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  • 8
    Electronic Resource
    Electronic Resource
    A neutron backscattering study of lattice deformations in silicon due to SiO2 precipitation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 533-539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski-grown dislocation free silicon crystals containing approximately 7.5, 9.9, and 18×1017 cm−3 oxygen atoms have been annealed at 750, 1050, and 1200 °C for times varying between 20 and 216 h. Neutron transmission spectra measured at reflection 111 in backscattering geometry reveal mean lattice contractions of the order of 5×10−5 and lattice parameter fluctuations up to Δd/d≈5×10−4. The measuring time for one spectrum is 15 min and an on-line characterization of the defects produced during annealing is feasible. A combination of this technique with neutron small angle scattering, γ-ray diffractometry, and diffraction experiments with high-energy synchrotron radiation opens new possibilities for investigations of oxygen precipitation in silicon crystals as used in very-large-scale integration semiconductor device technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345239
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  • 9
    Electronic Resource
    Electronic Resource
    Interpretation of rocking curves measured by γ-ray diffractometry (1974)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 7 (1974), S. 547-554 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Investigations of many imperfect single crystals of different materials by means of a γ-diffractometer show that the mosaic structure of large single crystals is often very inhomogeneous: the mosaic distribution function has neither a Gaussian nor a Lorentzian shape and the shapes differ remarkably for different volume elements in the sample. Current extinction theories must be considered with reservation because Darwin's intensity transport equations are solved assuming the scattering length for a given angle of incidence to be constant all over the irradiated crystal volume. This is not true for samples with inhomogeneous mosaic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889874010429
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  • 10
    Electronic Resource
    Electronic Resource
    Bent-crystal monochromator for 150 keV synchrotron radiation (1992)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 25 (1992), S. 432-438 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The 220 reflectivity curve of a 4 mm thick Si crystal is measured in asymmetric transmission (Laue) geometry. The crystal is bent to a radius varying from 24 to 138 m, and the analyzer is a nearly perfect Si(220) crystal in non-dispersive (+, −) arrangement. The full width at half-maximum of the reflectivity curves varies from 61 to 10 μrad, while that of a flat perfect crystal is 1.2 μrad, and the observed maximum reflectivity is about 60%. The calculated value is even higher, exceeding 80%. The bent crystal is used as an inverse-Cauchois monochromator, where the source of radiation is on the focusing circle. The effect of the beam divergence on the energy bandpass is eliminated, leaving only the contribution of the reflectivity curve. This can be matched to the desired resolution of the experiment by the choice of the thickness and asymmetry angle of the crystal. Compton-profile measurements from Ag and Au foils are used for a comparison of different monochromators. The bent-crystal monochromator provides 50 times more flux than the perfect Si(220) crystal and a better energy resolution than heat-treated Si(220) or mosaic Ge(220) crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889892000839
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