Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3010-3012
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial layers of CuInS2 are grown on chemically hydrogen terminated Si(111) surfaces with 4° miscut by molecular beam epitaxy. The morphological and structural properties are determined by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and texture analysis. The data show growth in the 〈112〉 direction and substantial twinning of the 75-nm-thick films. High-resolution cross-sectional micrographs of the interface indicate semicoherent epitaxial growth via an interfacial indium-rich secondary phase. The pronounced faceting of the film surface is discussed in relation to twin lamellae. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116822
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