ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous hydrogenated silicon-carbide films (a-SiC:H) were deposited in a standard rf glow discharge. Various gases as carbon sources, in addition to silane (SiH4), were used, namely methane (CH4), disilylmethane (DSM), trisilylmethane (TSM), and tetrasilylmethane (TetraSM). All our films show low hydrogen contents (NH≤2.5×1022 cm−3 for EG≤2.4 eV, determined by elastic recoil detection analysis) and low Urbach energies (E0≤70 meV for EG≤2.0 eV, determined by photothermal deflection spectroscopy). Infrared spectroscopy reveals that the more Si—C bonds are offered in the gas phase by using different carbon sources as feedstock, the more Si—C bonds are incorporated into the a-SiC:H solid. Furthermore, the number of CH3 groups decreases with the increasing number of Si—C bonds. The ratio of the hydrogen to the carbon content suggests less CH3 groups to be present in our films, compared to films of other authors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107999
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