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  • 1
    Electronic Resource
    Electronic Resource
    Preamplifier for electric-current noise measurements at low temperatures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2977-2980 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a current preamplifier that operates in a liquid-helium bath cryostat. It has been optimized for the measurement of dynamical electric-current fluctuations (noise) of high-impedance sources R(approximately-greater-than)100 MΩ. A bandwidth of up to 400 kHz has been achieved by effectively minimizing the capacitance of the input transistor with a dynamical feedback. The amplifier measures current noise in a scanning tunneling microscope (STM). It enables the measurement of shot noise for currents as low as 30 pA (sampling rate 5 s) for a high-impedance source with a resistance of R(approximately-greater-than)1 GΩ, a value typical for tunneling resistances in STM. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147083
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  • 2
    Electronic Resource
    Electronic Resource
    A differential interferometer for force microscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3131-3134 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a polarizing optical interferometer especially developed for force microscopy. The deflections of the force-sensing cantilever are measured by means of the phase shift of two orthogonally polarized light beams, both reflected off the cantilever. This arrangement minimizes perturbations arising from fluctuations of the optical path length. Since the measured quantity is normalized versus the reflected intensity, the system is less sensitive to intensity fluctuations of the light source. The device is especially well suited to static force measurements. The total rms noise measured is (approximately-less-than)0.01 A(ring) in a frequency range from 1 Hz to 20 kHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140543
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of metallic nanowires with a scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1325-1327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A procedure to pattern thin metal films on a nanometer scale with a scanning tunneling microscope (STM) operating in air is reported. A 30 nm film of hydrogenated amorphous silicon (a-Si:H) is deposited on a 10 nm film of TaIr. Applying a negative voltage between the STM tip and the a-Si:H film causes the local oxidation of a-Si:H. The oxide which is formed is used as a mask to wet etch the not-oxidized a-Si:H and subsequently, the remaining pattern is transferred into the metal film by Ar ion milling. Metal wires as narrow as 40 nm have been fabricated. Since a-Si:H can be deposited in very thin layers on almost any substrate, the presented procedure can be applied to structure all kind of thin films on a nanometer scale. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113230
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  • 4
    Electronic Resource
    Electronic Resource
    Resistless high resolution optical lithography on silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2989-2991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the high resolution patterning of a silicon surface without using a resist layer. A hydrogen passivated silicon surface is chemically modified by illumination with ultraviolet light (UV, λ=350.7 nm) in air. Auger electron spectroscopy (AES) revealed that silicon oxide was formed at the illuminated areas. A light interference pattern was made on the silicon surface by two UV laser beams, oxidation occurred only at the maximum intensity, but not at the minimum. In this way oxide lines were fabricated with a width below 200 nm on a 500 nm period. The oxide lines were used as a wet etch mask to etch more than 25 nm into Si(110) without affecting the oxide. The advantage of this technique is that it is a very simple process which allows the high resolution patterning over large areas of silicon without using a resist. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114835
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of large arrays of metallic nanowires on V-grooved substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1489-1491 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large arrays of Au nanowires down to 50 nm in width are fabricated on V-grooved InP substrates. Holographic laser interference exposure of photoresist and anisotropic etching are used to pattern the surface of InP(001) substrates into V-shaped grooves with a 200 nm period. Next, the patterned substrates are covered with a thin Au film, which is subsequently structured into nanowires using a well controlled wet etching process. Initial characterization confirms that the wires are electrically continuous. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114504
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  • 6
    Electronic Resource
    Electronic Resource
    Electron heating effects in diffusive metal wires (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 773-775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electron heating in metallic diffusive wires of varying length at liquid-helium temperature by measuring the electric noise. The local increase of the electron temperature can be essential already for small currents and is well described by a heat-diffusion equation for the electrons. Depending on the electron thermal conductance and the electron–phonon coupling in the wire, different length regimes are identified. The quantitative knowledge of the electron temperature is important for analysis of nonequilibrium effects involving current heating in mesoscopic wires. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119641
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  • 7
    Electronic Resource
    Electronic Resource
    Contacting carbon nanotubes selectively with low-ohmic contacts for four-probe electric measurements (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 274-276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Contact resistances of multiwalled nanotubes deposited on gold contact fingers are very large. We show that the contact resistances decrease by orders of magnitudes when the contact areas are selectively exposed to the electron beam in a scanning electron microscope. The focused electron beam enables the selection of one particular nanotube for electrical measurement in a four-terminal configuration, even if a loose network of nanotubes is deposited on the gold electrodes. For all measured nanotubes, resistance values lie in a narrow range of 0.35–2.6 kΩ at room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121778
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  • 8
    Electronic Resource
    Electronic Resource
    What Are the "Holes" in Self-Assembled Monolayers of Alkanethiols on Gold? (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 611-614 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00015a001
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  • 9
    Electronic Resource
    Electronic Resource
    Electrochemical carbon nanotube field-effect transistor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1291-1293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the electric-field effect of carbon nanotubes (NTs) in electrolytes. Due to the large gate capacitance, Fermi energy (EF) shifts of order ±1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are hole-doped in air with |EF|(approximate)0.3–0.5 eV, corresponding to a doping level of (approximate)1013 cm−2. Hole-doping increases in the electrolyte. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350427
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  • 10
    Electronic Resource
    Electronic Resource
    Separation of magnetic and topographic effects in force microscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7278-7280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several techniques are presented which allow magnetic force microscopy to be performed while simultaneously mapping the surface topographic features of a magnetic sample. The separation of magnetic and topographic features measured simultaneously with a scanning force microscope is made possible by an instrument based on a differential interferometer that can detect cantilever deflections of 0.005 nm at a frequency as low as 1 Hz. Two different applications are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344511
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