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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of deep levels in n-type GaN by transient capacitance methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 304-309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (eV) ΔE1=0.264±0.01, ΔE2=0.580±0.017, and ΔE3=0.665±0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and group theory results in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357144
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  • 2
    Electronic Resource
    Electronic Resource
    Deep center scattering potential in InGaP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7410-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobility limited by the scattering of a phosphorous vacancy-induced deep center in In0.5Ga0.5P alloy grown by liquid-phase epitaxy on a (100) GaAs substrate has been investigated by means of Hall mobility and deep-level transient spectroscopy measurements. Two kinds of scattering potentials, Gaussian well type and square-well type, were considered. It was found that the scattering potential can be better described by the Gaussian-type potential than the square-well one. The mobility limited by deep center scattering has been fully calculated and analyzed. As a result, the mobility is characterized by a temperature dependence of T−1/2 in the temperature range from 77 to 400 K. The point defect scattering severely reduces the total mobility as its concentration increases. In addition, the scattering case when there is an electron trapped in the Gaussian potential well was also quantitatively investigated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358524
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  • 3
    Electronic Resource
    Electronic Resource
    Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 771-774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole–Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission rate from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353336
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  • 4
    Electronic Resource
    Electronic Resource
    Energy band-gap bowing parameter in an AlxGa1−x N alloy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4540-4543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical measurements are performed near the fundamental absorption edge for single-crystal AlxGa1−x N epitaxial layers in the composition range of 0≤x≤0.4. The dependence of the energy band gap on composition is found to deviate downwards from linearity, the bowing parameter being b=1.0±0.3 eV. The origin of the large bowing is discussed in terms of the pseudopotential of Al and Ga based on the pseudopotential of the Heine–Abarenkov type. With increasing x the absorption edges broaden, which is attributed to the increase of the compositional nonuniformity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338387
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  • 5
    Electronic Resource
    Electronic Resource
    Subpicosecond photoluminescence from radiation-damaged Ga0.47In0.53As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The luminescence of photoexcited carriers far above the band gap of Ga0.47In0.53As is studied with subpicosecond time resolution. In undamaged material the luminescence decays with characteristic times of 2–4 ps in the energy range between 1.9 and 1.4 eV, due to the rapid energy relaxation of electrons and holes far above the band edges. In radiation-damaged (He+ bombarded) material, luminescence decay times as short as 0.9 ps are observed. The luminescence spectra give evidence for extreme nonequilibrium distributions of the photoexcited carriers, caused by the ultrafast recombination, which—in radiation-damaged samples—is a faster process than energy relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101852
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved measurement of tunneling and energy relaxation of hot electrons in GaAs/AlGaAs double quantum well structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1996-1998 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling and cooling times of photoexcited hot electrons in AlGaAs/GaAs double (one narrow and the other wide) quantum well structures have been measured using photoluminescence excitation correlation spectroscopy. The tunneling time was of the order of 200 ps for a 60 A(ring) barrier. The tunneling is the indirect process assisted by the emission of optical phonons. The relaxation time of electrons as a function of the kinetic energy shows a threshold for cooling via the emission of optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102144
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  • 7
    Electronic Resource
    Electronic Resource
    Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2024-2026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8×1019 cm−3, but the hole concentration was as low as 1.3×1017 cm−3 at room temperature. The DLTS spectrum has a dominant peak D1 with activation energy of 0.41±0.05 eV, accompanied by two additional peaks with activation energies of 0.49±0.09 eV(D2) and 0.59±0.05 eV(D3). It was found that the dominant peak D1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg–N–H complexes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122356
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  • 8
    Electronic Resource
    Electronic Resource
    Deep levels in the upper band-gap region of lightly Mg-doped GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in undoped and weakly Mg-doped n-type GaN films fabricated by metalorganic chemical vapor deposition were examined with deep level transient spectroscopy. Deep levels measured at 0.26 and 0.62 eV below the conduction band were found in relatively low concentrations of ∼2×1013 cm−3 in undoped GaN. Addition of small quantities of the Mg acceptor species by means of bis-cyclopentadienyl magnesium (Cp2Mg) during growth corresponded to a significant increase in the concentration of the level at 0.62 eV. The concentration of the shallower level, found to be independent of the Cp2Mg addition, remained unchanged. These deep levels may detrimentally affect optical and electrical properties when fabricating p-type GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116080
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 222-224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO2 grid mask pattern. Within window regions of (0.2–0.5) mm×(0.2–0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432764
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  • 10
    Electronic Resource
    Electronic Resource
    Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2676-2678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height φBn was determined to be 0.844 and 0.94 eV by current-voltage and capacitance measurements, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110417
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