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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3586-3592 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere, were studied. Interaction of CO with molten silicon surface during growth produced SiC-like structures in a thin layer on the surface exposed to CO. Infrared spectroscopy results suggest that this layer is constituted of good quality SiC; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1−xCx in the form of small crystallites mixed with C- and O-rich silicon.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8115-8117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 A(ring), deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01–6.0, 0.01–0.6, and 1.4–5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the whole spectral range. The low-energy free-carrier response was well fitted by using the classical Drude–Lorentz dielectric function. A simple two-band model allowed the resulting optical parameters to be interpreted coherently with those previously obtained from transport measurements, hence yielding the densities and the effective masses of electrons and holes. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4169-4244 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A review is presented of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon. After a general overview of the system "oxygen in silicon,'' the thermodynamics and the kinetics of the precipitate formation are treated in detail, with major emphasis on the phenomenology; subsequently, the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results. Finally, the possible influence of oxygen precipitation on technological applications is stressed, with particular attention to recent results regarding device yield. Actually, the essential novelty of this review rests on the attempt to give an extended picture of what has been recently clarified by means of highly sophisticated diagnostic methods and of the influence of precipitation on the properties of semiconductor devices. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 166-170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possible use of the absorption band at 1207 cm−1 for the measurement of the concentration of interstitial oxygen (Oi) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements show that the conversion factor for such evaluation of the residual Oi after precipitation is strongly influenced by the presence of oxide precipitates; a limit value for the concentration of precipitated oxygen is identified, above which the measure becomes unreliable. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3838-3842 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of generalized anisotropic ellipsometry on a biaxial organic single crystal, namely, potassium acid phthalate, are discussed and analyzed to obtain the optical functions of the crystal along the different crystal directions. The dispersion of the real refractive indices nx, ny, and nz in the spectral range from 300 to 1400 nm, as well as the values of the extinction coefficient kx,y at the absorption edge are determined and modeled. © 2001 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xMnxGa2Se4 crystals were grown by the vapor-phase transport technique. Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with 0.05≤x≤1. A modified Brillouin function fits the data and the fitting parameters T0 (≥0) and Seff are obtained. These results reflect that there exists a weak antiferromagnetic interaction among Mn++ ions. The magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating sample magnetometer. The susceptibility displays a high-temperature Curie–Weiss behavior. From quantative analysis the exchange integral constant (J1+2J2+J3)/kB was obtained to be ∼−1.5 K.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4313-4320 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interstitial oxygen profile across an epitaxial silicon and Czochralski silicon interface has been studied using high-spatial-resolution Fourier transform infrared spectroscopy. Systematic transmission measurements performed on a transversal wafer cross section evidenced oxygen contamination of the epilayer. This was due to solid-state outdiffusion from the substrate occurring during epilayer deposition. Oxygen diffusivity values resulting from the experiments suggest a mechanism scarcely influenced by the interface. Oxygen contamination is strictly related to the type of dopant present in the substrate and not to that present in the epilayer. The oxygen contamination of the epilayer (significant in n-type substrate samples) could explain the structural defects often observed in epitaxial layers by different techniques.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2963-2967 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3785-3787 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon complex formation during annealing in the temperature range from 450 to 1150 °C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600 °C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm−1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2099-2101 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen content in the bulk of Czochralski silicon was analyzed by using micro-Fourier transform infrared spectroscopy in a transversal wafer cross-section configuration. This technique locally distinguishes between interstitial oxygen and oxygen precipitates in wafers used as substrates for epitaxial layer growth. Systematic measurements performed in the 5000–700 cm−1 wavenumber range clearly indicate the presence of oxygen microprecipitates in the bulk of the processed silicon wafers. Quantitative determination of oxygen precipitate density is reported and compared with the measured interstitial oxygen concentration.
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