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  • 1
    Electronic Resource
    Electronic Resource
    Direct comparison of quantum and classical descriptions of high-field carrier transport in semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3127-3130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fully quantum-mechanical description of high-field carrier transport in real space representation in semiconductors is developed. The present approach treats a high electric field unperturbatively, while a realistic electron-phonon interaction is included through the perturbation scheme. Direct comparisons of transport properties at very short time in real space with the corresponding semiclassical (Monte Carlo) descriptions are presented. The results explicitly show the quantum effects on the spreading of electron wave packets due to the electron-phonon interaction and help to clarify the limitation of semiclassical descriptions based on the Boltzmann transport equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349291
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  • 2
    Electronic Resource
    Electronic Resource
    Impact ionization rate near thresholds in Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5102-5105 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact ionization rate in Si is determined by performing the full-band Monte Carlo simulations with an ionization model that takes into account the correct joint density of states of Si. The ionization model, which is a refined version of the previously reported one [N. Sano, M. Tomizawa, and A. Yoshii, Jpn. J. Appl. Phys. 30, 3662 (1991)], features a finer mesh spacing for discretizing the wave-vector space and a smaller energy interval for the energy-conserving δ function in the transition probability. The impact ionization rate shows significant anisotropy near thresholds (≤3 eV) associated with the complexity of the indirect band structure in Si. When the impact ionization rate is averaged over all directions, good agreement with that extracted from recent experiments [E. Cartier, M. V. Fischetti, E. A. Eklund, and F. R. McFeely, Appl. Phys. Lett. 62, 3339 (1993)] is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355754
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  • 3
    Electronic Resource
    Electronic Resource
    Impact-ionization model consistent with the band structure of semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2020-2025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new formula for calculating the impact-ionization probability for electrons in semiconductors is derived in terms of the density of states of semiconductors and thus takes into account the details of the realistic band structure. Applying this formula to Si, GaAs, InAs, and In0.53Ga0.47As yields ionization probabilities similar to those derived from the first principles under the constant matrix element approximation, and at high energies (ε≥3 eV) the magnitude and the energy dependence of the calculated ionization probability are similar for each of these materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358839
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  • 4
    Electronic Resource
    Electronic Resource
    Monte Carlo analysis of ionization threshold in Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 653-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of electronic high-field transport in Si are performed. Contrary to previous treatments of impact ionization, we do not employ the ordinary Keldysh formula [Sov. Phys. JETP 21, 1135 (1965)] with a soft threshold, but rather a new expression, which is an explicit function of the wave vector of the initiating electron, is used. The calculation results of drift velocity, ionization coefficient, and quantum yield show excellent agreement with the experimental data. Our results strongly substantiate the idea that the ionization threshold is basically hard even in Si in the sense that the electrons rapidly ionize when they approach the threshold energies and that the softness of the ionization threshold is introduced through the wave vector dependence of the threshold energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102727
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  • 5
    Electronic Resource
    Electronic Resource
    Scaling limit of digital circuits due to thermal noise (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5019-5024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The error probability at a node of a digital circuit exposed to thermal noise agitation is investigated and the minimal dissipation–reliability relation for practical electronic circuits is derived. The digital circuit is modeled by an inverter chain with ideal transfer characteristics, and the error probability due to spurious data transfer caused by the thermal noise fluctuation is evaluated as a function of the node switching energy. The maximal error probability at each node allowed by the reliability requirement of the total system leads us to the minimal node energy dissipated per logical switching, which amounts to around 12 eV in the future 1010 gate system operated at a 10 GHz clock rate with a 104 FIT level reliability. In view of the device size-scaling trend of large-scale integrated circuits, the minimal node energy is expected to be reached at a feature size of 10–20 nm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367317
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  • 6
    Electronic Resource
    Electronic Resource
    Soft and hard ionization thresholds in Si and GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1418-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new simple model of ionization probabilities in semiconductors, which clarifies the origin of softness and hardness of the ionization thresholds observed in Si and GaAs, respectively. It is shown that the ionization probability is, in principle, hard in both materials in the sense that the electrons rapidly ionize when they approach the threshold energies, and that the softness is mainly introduced from the fact that the threshold energies strongly depend upon the wave vectors of the initiating electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101612
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  • 7
    Electronic Resource
    Electronic Resource
    Electron transport in SiO2 under a strongly inhomogeneous electric field (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2785-2787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations have been performed to study the electron transport in SiO2 subject to a strongly inhomogeneous electric field produced by a hyperboloid needle and plate assembly. The dominant scattering mechanism (the polar electron-phonon interaction) in a regime of electric field ((approximately-less-than)3×106 V/cm) is treated with the Fröhlich–Hamiltonian formalism [Proc. R. Soc. London A 160, 230 (1937)]. The spatial evolutions of the electron energy distribution and the average electron energy are presented. A characteristic overheating due to the nonuniform high electric field near the needle tip is observed and its relevance to the initiation of dielectric breakdown is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341578
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  • 8
    Electronic Resource
    Electronic Resource
    Thickness dependence of the effective dielectric constant in a thin film capacitor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 632-634 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The static value of the effective dielectric constant in a thin film capacitor is simulated by means of the local field theory. The value of it shows a sharp decrease as the film thickness is decreased in an ultrathin film geometry. This phenomenon is due to the size effect intrinsic to a thin film structure and has nothing to do with the material aspect. The decrease is more remarkable for larger values of the bulk dielectric constant. It is recovered by inserting interface layers with larger atomic polarizability between the film and the capacitor electrode. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121930
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  • 9
    Electronic Resource
    Electronic Resource
    Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2267-2269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the dopant model employed in drift-diffusion device simulations for the study of statistical threshold voltage variations associated with discrete random dopants. It is pointed out that the conventional dopant model, when extended to the extreme "atomistic" regime, becomes physically inconsistent with the length-scale presumed in drift-diffusion simulations. Splitting the Coulomb potential of localized dopants between the long-range and short-range parts, we propose a dopant model appropriate for three-dimensional drift-diffusion simulations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406980
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  • 10
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    Soft and hard ionization thresholds in Si and GaAs (1989)
    American Institute of Physics
    Details
    Publication Date: 1989-10-02
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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