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  • 1
    Electronic Resource
    Electronic Resource
    Pressure tuning of interatomic interactions in solids: glassy properties of ferroelectrics and dielectrics (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1127-1134 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100366a022
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  • 2
    Electronic Resource
    Electronic Resource
    Deep electronic levels at growth interrupted interfaces in low-temperature-grown GaAs and the pressure dependence of these levels (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1807-1814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electronic energy levels associated with defects confined to interrupted growth interfaces of thin GaAs layers grown by low-temperature (720 K) metalorganic chemical vapor deposition using tertiarybutylarsine and subsequently annealed at 920 K for about 2 min were investigated by transient capacitance spectroscopy at both atmospheric pressure (1 bar) and hydrostatic pressures to 8 kbar. Samples grown under widely different As/Ga ratios in the gas phase were compared, and this ratio was found to have a strong influence on the levels observed. Most of these levels are characteristic of levels seen in GaAs grown from the vapor phase. Analysis of the pressure dependencies of the electron emission rates and capture cross sections shows that most of the levels move higher in energy with pressure and yields the activation volume which accompanies electron emission or capture. These features are unique signatures of the levels and provide new insights into the physics involved. One of the levels is identified as the midgap donor EL2. Its energy exhibits a relatively large increase with pressure, and a large inward (outward) volume relaxation accompanies electron emission (capture) of electrons from (by) it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351187
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature dielectric properties of candidate substrates for high-temperature superconductors: LaAlO3 and ZrO2 : 9.5 mol % Y2O3 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4214-4219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of temperature (4–400 K), hydrostatic pressure and frequency on the dielectric constant, ε', and dielectric loss of single crystals of LaAlO3 and cubic yttria(9.5 mol %)-stabilized zirconia (ZrO2) were investigated. Both crystals are relatively low-loss, low-dispersion dielectrics in the temperature range (T〈150 K) of most interest for high-temperature superconductors. The pressure results make it possible to evaluate the various contributions to the temperature dependence of ε'. It is found that this dependence is dominated by the change of polarizability with volume. The dielectric properties of the two crystals are compared with those of other candidate substrate materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346211
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis and optical properties of MoS2 and isomorphous nanoclusters in the quantum confinement regime (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7934-7944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly crystalline nanoclusters of hexagonal (2H polytype) MoS2 and several of its isomorphous Mo and W chalcogenides have been synthesized with excellent control over cluster size down to ∼2 nm. These clusters exhibit highly structured, bandlike optical absorption and photoluminescence spectra which can be understood in terms of the band-structures for the bulk crystals. Key results of this work include: (1) strong quantum confinement effects with blue shifts in some of the absorption features relative to bulk crystals as large as 4 eV for clusters ∼2.5 nm in size, thereby allowing great tailorability of the optical properties; (2) the quasiparticle (or excitonic) nature of the optical response is preserved down to clusters (approximately-less-than)2.5 nm in size which are only two unit cells thick; (3) the demonstration of the strong influence of dimensionality on the magnitude of the quantum confinement. Specifically, three-dimensional confinement of the carriers produces energy shifts which are over an order of magnitude larger than those due to one-dimensional (perpendicular to the layer planes) confinement emphasizing the two-dimensional nature of the structure and bonding; (4) the observation of large increases in the spin-orbit splittings at the top of the valence band at the K and M points of the Brillouin zone with decreasing cluster size, a feature that reflects quantum confinement as well as possible changes in the degree of hybridization of the electronic orbitals which make up the states at these points; and (5) the observation of photoluminescence due to both direct and surface recombination. Several of these features bode well for the potential of these materials for solar photocatalysis. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365367
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  • 5
    Electronic Resource
    Electronic Resource
    Pressure as a probe of the glassy properties of compositionally disordered soft mode ferroelectrics: (Pb0.82La0.12)(Zr0.40Ti0.60)O3 (PLZT 12/40/60) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2538-2545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that hydrostatic pressure qualitatively changes the dielectric response of a lanthanum-modified, lead zirconate–titanate (PLZT 12/40/60). At 1 bar this material exhibits, on cooling, a very weak relaxor (R) response followed by a spontaneous R-to-normal ferroelectric (nFE) transition. Pressure induces crossover to full relaxor behavior and reveals the continuous evolution of the dynamics and energetics of the relaxation process. These results, which are similar to our earlier results on other disordered perovskites, appear to be general features of soft mode ferroelectrics with random site dipolar impurities or polar nanodomains. They can be understood in terms of a large decrease with pressure in the correlation radius among polar nanodomains—a unique property of soft ferroelectric mode systems. An analogy between the influences of increasing pressure and increasing La concentration on the dielectric response of PLZTs is demonstrated, but it is the pressure results that clarify the physics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368415
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  • 6
    Electronic Resource
    Electronic Resource
    An improved deep level transient spectroscopy method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1801-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An examination of the DLTS (deep level transient spectroscopy) technique suggests a new method for analyzing data for DLTS signal intensity S(T) as a function of temperature T. It is shown that the low-temperature asymptotic slope of a plot of ln S(T) vs 1/T yields the activation energy for deep level emission rates. Thus, in the new method, deep level energies are obtained from one run at a given rate window in contrast with traditional DLTS for which several runs at various rate windows are needed to obtain the same information.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339874
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum-ferroelectric pressure sensor for use at low temperatures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1913-1916 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A small, multilayer capacitance sensor (∼70 mm3) for measuring pressure over a broad range at low temperatures is described. The dielectric material is a quantum ferroelectric in the (Cd, Pb)2(Nb, Ta)2 O7 ceramic system, and the reciprocal capacitance varies linearly with pressure into the kilobar region. The average sensitivity of the devices studied is 151 pF/kbar, and the sensor is essentially independent of both intense magnetic fields and temperature below 10 K. A calibration for the slight magnetic field effect is given, and the sensor is dielectrically stable at helium temperatures. A one-point pressure calibration is estimated to be reliable to 〈±0.1%, and pressure changes in the millibar range can be resolved if certain precautions are taken.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138444
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  • 8
    Electronic Resource
    Electronic Resource
    Tailorable, visible light emission from silicon nanocrystals (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3164-3166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline, size-selected Si nanocrystals in the size range 1.8–10 nm grown in inverse micellar cages exhibit highly structured optical absorption and photoluminescence (PL) across the visible range of the spectrum. The most intense PL for the smallest nanocrystals produced (∼2 nm) was in the blue (∼365 nm) with a radiative lifetime of ∼1 ns and is attributed to direct recombination at zone center. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124096
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  • 9
    Electronic Resource
    Electronic Resource
    Pressure-induced crossover from long-to-short-range order in [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095 single crystal (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1327-1329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pressure-induced crossover from normal ferroelectric–to–relaxor behavior has been observed in single crystal [Pb(Zn1/3Nb2/3)O3]0.905(PbTiO3)0.095, or PZN-9.5% PT. Analogy with similar observations for other perovskites indicates that this crossover is a general feature of compositionally disordered soft mode ferroelectrics. The pressure-temperature phase diagram has been also determined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126024
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  • 10
    Electronic Resource
    Electronic Resource
    Pressure dependence of the β molecular relaxation process and dielectric properties of polyvinylidene fluoride (1992)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Physics 30 (1992), S. 669-679 
    Details
    ISSN: 0887-6266
    Keywords: dielectric properties of poly(vinylidene fluoride), pressure dependence of ; poly(vinylidene fluoride), pressure dependence of relaxation and dielectric properties of ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The effects of hydrostatic pressure to 20 kbar on the β molecular relaxation process of polyvinylidene fluoride (PVDF) and on the dielectric properties in the neighborhood of this relaxation have been investigated. This relaxation has a strong influence on the electrical and mechanical properties of PVDF. Pressure causes a large shift to higher temperatures (∼ 10K/kbar) of the dielectric relaxation peak and a decrease in the width of the distribution of relaxation times. This slowing down of the relaxation process is discussed in terms of the Vogel-Fulcher equation and related models, and it results from an increase in both the energy barrier to dipolar motion and the reference temperature (T0) for the kinetic relaxation process which represents the “static” dipolar freezing temperature for the process. The general applicability of the Vogel-Fulcher equation to relaxional processes in polymers and other systems is briefly discussed. The pressure dependence of the dielectric constant both above and below the relaxation peak temperature (Tmax) is found to be dominated by the change in polarizability. The effect is larger above Tmax because of the relatively large decrease in the dipolar orientational polarizability with pressure.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/polb.1992.090300703
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