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  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of surface acoustic wave device under acoustic excitation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8647-8649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The acoustic field inside a surface acoustic wave device was studied by means of double-crystal x-ray diffraction. Angular satellites in the diffraction pattern were observed due to the coherent scattering on the acoustic superlattice. Satellite dynamics allows determination of the acoustic wave amplitude. Due to the sensitivity of x-ray diffraction to the direction of atomic displacements, the amplitude of different polarization components in the Rayleigh wave can be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353398
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  • 2
    Electronic Resource
    Electronic Resource
    Acoustic field study in layered structures by means of x-ray diffraction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3134-3137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach for probing acoustic field in acousto-optical devices based on dynamical x-ray diffraction is demonstrated. The measurements were carried out on the ZnO-SiO2-Si system. The experimental results as well as the advantages of the method are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350979
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced photoluminescence from GaN grown by lateral confined epitaxy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1191-1197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral confined epitaxy (LCE) of GaN on Si substrates results in a reduction of thermal crack density with decreasing the lateral dimensions of the growth pattern. Below a critical size, crack-free GaN on Si is obtained. The intensity of band-to-band photoluminescence (PL) peak in LCE GaN is strongly enhanced with respect to uniformly grown GaN on Si. The present study rules out the effect of crack density, internal reflections (microcavity effects), as well as enhanced light extraction efficiency, and excitation or emission through preferred facets (shape effects) as the main factor in PL enhancement. It is shown that the reduction in threading dislocation density (TDD) along the edges of the LCE patterns improves the luminescence efficiency. The relative increase in high quality material (low TDD) with the reduction of LCE unit size is, thus, the main reason for the enhanced PL intensity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1432115
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical isolation of GaN by ion implantation damage: Experiment and model (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical isolation of unintentionally doped GaN layers due to the damage created by H+ and He+ ions passing through the layer are demonstrated. As a result of the irradiation, the sample resistance increases by 11 orders of magnitude and the band-to-band photoluminescence (PL) emission is totally quenched. Following annealing (1000 °C, 30 s), the conductivity can be nearly completely recovered, whereas only partial recovery of the PL emission is obtained. A model is proposed which invokes the presence of potential barriers for electronic transport across extended defects as the major factor limiting carrier mobility. Radiation defects increase these barriers, thus affecting the sample resistivity. This model fits the experimental results for both H and He induced damage extremely well and thus proves that defects created by nuclear collisions of the ions traversing the layer are responsible for the observed effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123874
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetic model for gradual degradation in semiconductor lasers and light-emitting diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new semiphenomenological statistical kinetic model for gradual degradation in semiconductor laser and light-emitting diodes is presented. In this model, the injection of a nonequilibrium electron-hole plasma increases the probability of structural changes and reduces their effective activation energy. Arrhenius-like expressions for the degradation rate with the pre-exponential factor and the effective activation energy as explicit functions of the material parameters are derived. Good agreement with experimental data is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100297
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  • 6
    Electronic Resource
    Electronic Resource
    Cross coupled cavity semiconductor laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 767-769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel monolithic coupling scheme in which three or four active waveguides interact interferometrically to form a multicavity semiconductor laser is demonstrated. The coupling between perpendicular waveguides is obtained by an integrated beamsplitter. Frequency selection, tunability, and single mode operation are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99333
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetics of pressure-dependent gradual degradation of semiconductor lasers and light-emitting diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1170-1172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A statistical kinetic model for gradual degradation of semiconductor lasers and light-emitting diodes under the influence of pressure is presented. Within the framework of this model, the rate coefficient for disordering atom jumps, K, and the operating lifetime of the device, τ, are explicitly given in terms of temperature, pressure, material parameters, and free-carrier concentration. We find that a compressive pressure reduces the effective activation energy of the rate process and therefore accelerates degradation in GaAs- and InP-based devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101687
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  • 8
    Electronic Resource
    Electronic Resource
    Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2676-2685 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive index of hexagonal AlxGa1−xN at room temperature and its temperature dependence at elevated temperatures have been determined with high accuracy by spectroscopic ellipsometry. Measurements have been conducted on samples with aluminum molar fractions ranging from 0% to 65% and at temperatures between 290 and 580 K. The refractive index in the transparent spectral region has been determined as a function of photon energy, using the Kramers–Kronig relations with suitable approximations, and applying a multilayer model. An analytical expression for the composition and temperature dependent refractive index in the transparent region, above room temperature, has been obtained. The refractive index has been found to increase with increasing temperature. The shift of the refractive index is strongest for GaN and decreases for AlGaN with increasing aluminum molar fraction. The impact on the properties of GaN based waveguides is illustrated by a slab waveguide calculation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1341212
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  • 9
    Electronic Resource
    Electronic Resource
    Lateral coherence properties of broad-area semiconductor quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 66-68 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337629
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  • 10
    Electronic Resource
    Electronic Resource
    Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2660-2662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a novel photosignal effect when laser light enters an amorphous hydrogenated silicon (a-Si:H) core waveguide and an external voltage is applied. Above a threshold voltage, the electric field separates the photocarriers in the a-Si:H layer so that the voltage across it is reduced. For larger voltages or high light intensities, this screening effect saturates. Analysis of the results yields electron and hole drift mobilities of 0.6 and 0.2 cm2/V s), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105931
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