ISSN:
1573-8663
Keywords:
zinc oxide
;
film formation
;
crystal arrangement
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The orientations of ZnO films parallel and perpendicular to the surface of the substrate were investigated as functions of the deposition temperature and substrate material. The degree of orientation increased with increasing deposition temperature and became perfectly oriented at a characteristic temperature. At a deposition temperature of 620°C, polycrystalline films were obtained on polycrystalline Al2O3; substrates. (001) oriented films were obtained on fused silica and (100) rutile substrates. Epitaxially grown (110) and (001) oriented films were obtained on various kinds of single crystal substrates. The difference between the (110) and (001) orientations was explained by the lattice mismatch between the films and the substrates. Epitaxial growth of films exhibiting two directions was observed when the two equivalent directions of lattice mismatch existed. These results show the possible formation of various types of the crystallographic relationships between the grains in the film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009965432447
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