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  • 1
    Series available for loan
    Series available for loan
    Bestimmungen von Eisbewegungen am Rand des antarktischen Inlandeises (1966)
    Berlin : Nationalkomitee für Geodäsie und Geophysik der Deutschen Demokratischen Republik
    Associated volumes
    Details Availability
    Call number: MOP Per 581(3/4) ; ZSP-319/C-4(2. Ex.) ; ZSP-319/C-4
    In: Geodätische und Geophysikalische Veröffentlichungen : Reihe 3, Physik der festen Erde, Nr. 4
    Type of Medium: Series available for loan
    Pages: 32 Seiten , Illustrationen
    ISSN: 0435-6187
    Series Statement: Geodätische und Geophysikalische Veröffentlichungen : Reihe 3, Physik der festen Erde 4
    Language: German
    Note: Inhaltsverzeichnis 1. Aufgabenstellung 2. Expeditionsverlauf 2.1. Vorbereitung der Expedition 2.2. Schiffsreise und Arbeiten im Expeditionsgebiet 3. Die trigonometrischen Messungen 3.1. Vorbereitung 3.2. Signalisierung 3.3.Beobachtung 3.4. Genauigkeit der Beobachtungen 4. Die Auswertung 4.1. Aufbereitung der Maßergebnisse 4.2. Berechnung der Basen und Azimute 4.3. Lagebestimmung 4.3.1. Ermittlung der Näherungskoordinaten 4.3.2. Ausgleichung der Richtungsmessungen 4.3.3. Zusammenschluß der vier Teilnetze 4.3.4. Einfluß der Eisbewegung während der Messung 4.3.5. Genauigkeit der Lagebestimmung und der Eisbewegungsvektoren 4.4. Höhenbestimmung 4.4.1. Ermittlung der einzelnen Höhenunterschiede 4.4.2. Ausgleichung des Höhennetzes 4.4.3. Genauigkeit der Höhenbestimmung 5. Die Angabe der Eisbewegung und kurzer Vergleich mit den Meßergebnissen 1962 6. Ausblick 7. Zusammenfassung Schrifttum Schlußbemerkungen Anlagenverzeichnis
    Location: MOP - must be ordered
    Location: AWI Archive
    Location: AWI Archive
    Branch Library: GFZ Library
    Branch Library: AWI Library
    Branch Library: AWI Library
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  • 2
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    Determination of the optimal camera distance for cloud height measurements with two all-sky imagers (2019)
    Elsevier
    Details
    Publication Date: 2019-02-01
    Print ISSN: 0038-092X
    Electronic ISSN: 1471-1257
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Published by Elsevier
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Nonimaging characterization of imperfect single crystals by means of a three-crystal diffractometer for high energy synchrotron radiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3680-3684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-crystal diffractometer for synchrotron radiation with energies of 100 keV and higher has been used in a nondispersive setting to map out the distribution of Bragg scattered intensity in the scattering plane with very high resolution. By using perfect silicon crystals in symmetrical Laue geometry for reflection 220 as monochromator and analyzer, respectively, a resolution of ≈2×10−4 A(ring)−1 in the direction parallel to the reciprocal lattice vector G220 and of ≈10−5 A(ring)−1 in the direction perpendicular to G220 has been achieved at high counting rates. As a first example the mosaic structure of a plastically deformed silicon crystal has been characterized with respect to its mosaic distribution and lattice parameter fluctuations. Second, the study of a silicon-germanium gradient crystal, produced by means of the chemical vapor deposition technique, demonstrated that the substrate peak could be well separated from the intensity distribution of the gradient crystal. A two-dimensional contour plot of the intensity distribution in the vicinity of 220 shows the variation of the lattice parameters in the gradient crystal, as well as the lattice plane tilts of the substrate and the silicon-germanium layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352927
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  • 4
    Electronic Resource
    Electronic Resource
    Diffraction of high-energy synchrotron radiation (invited) (abstract) : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1614-1614 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diffraction of high-energy synchrotron radiation at energies above 100 keV combines advantages of conventional x-ray diffraction and neutron diffraction. For hard x rays absorption in matter is weak with typical mean free paths of several millimeters. Bulk properties are studied on large samples. With a three-crystal diffractometer an excellent k-space resolution of about 10−5 A(ring)−1 transversal and 10−4 A(ring)−1 longitudinal is achieved. In this contribution the particularities of hard x rays, the instrumental setup, and the k-space resolution are discussed and presented. The potential of the new method will be demonstrated on two examples: magnetic diffraction from MnF2 and the structural phase transition of SrTiO3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146465
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  • 5
    Electronic Resource
    Electronic Resource
    Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3691-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of optical studies on the properties of GaN grown by low-pressure metalorganic chemical-vapor deposition, with emphasis on the issues vital to device applications such as stimulated emission and laser action as well as carrier relaxation dynamics. By optical pumping, stimulated emission and lasing were investigated over a wide temperature range up to 420 K. Using a picosecond streak camera, the free and bound exciton emission decay times were examined. In addition, the effects of temperature and pressure on the optical interband transitions and the transitions associated with impurity/defect states were studied using a variety of spectroscopic methods, including photoluminescence and photoreflectance. The fundamental band gap of GaN was mapped out as a function of temperature using the empirical Varshni relation. The pressure coefficient of the gap was determined using diamond-anvil pressure-cell technique. The hydrostatic deformation potential for the direct Γ band gap was also derived from the experimental results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361200
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  • 6
    Electronic Resource
    Electronic Resource
    Single- and multi-wall carbon nanotube field-effect transistors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2447-2449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122477
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  • 7
    Electronic Resource
    Electronic Resource
    Large optical nonlinearities near the band gap of GaN thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interband optical transitions in single-crystal GaN films grown by metal organic chemical vapor deposition have been studied at 10 K and room temperature using nondegenerate nanosecond optical pump-probe techniques. At low temperatures, strong, well-resolved features are seen in the absorption and reflection spectra corresponding to the 1s A and B exciton transitions. These features broaden and decrease in intensity due to the presence of a high density of photoexcited free carriers and are completely absent in the absorption and reflection spectra as the excitation density, Iexc, approaches 3 MW/cm2, resulting in induced transparency in transmission measurements. The absorption spectra also show induced absorption below the band gap as Iexc is increased. Both the observed induced transparency and induced absorption were found to be extremely large, exceeding 4×104 cm−1 as the pump density approaches 3 MW/cm2 at 10 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121040
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1220-1222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature near-band-edge photoluminescence of thick (d≈36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free-exciton emission (n=1 and 2) and two electron transitions (TETs) of donor-bound excitons is found. The defect involved in the TET is most likely a gallium-related donor. This is concluded from the TET line wavelength adopting recent bulk CdTe TET data. A new emission line at 781.4 nm (1586.7 meV) is observed. It is tentatively assigned to a TET of a free exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101660
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetism of ultrathin FeCo (001) films on GaAs(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5457-5459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe34Co66 films in a thickness range from 3 to 100 monolayers (MLs) were grown by molecular beam epitaxy on GaAs(001) at room temperature. The growth was characterized by reflection high energy electron diffraction and x-ray diffraction. The magnetic properties were investigated by alternating gradient magnetometry magneto-optic Kerr effect, and superconducting quantum interference device magnetometry. The films show a strong interface-induced uniaxial in-plane anisotropy with the easy axis along [110]. In addition, the fourfold anisotropy coefficient changes sign around 6 ML i.e., the easy axis of the fourfold anisotropy switches from 〈110〉 to 〈100〉 with decreasing thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373371
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  • 10
    Electronic Resource
    Electronic Resource
    Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped near ultraviolet lasing from single-crystal GaN grown by metalorganic chemical vapor deposition has been achieved over a temperature range from 10 K to over 375 K by using a side-pumping geometry on small barlike samples. The laser emission threshold was measured as a function of temperature and the threshold was found to show weak temperature dependence: ∼500 kW/cm2 at 10 K and ∼800 kW/cm2 at room temperature (295 K) for one particular sample studied. The longitudinal lasing modes were clearly observed. The characteristics of the temperature dependence of the laser emission threshold suggests that GaN is a suitable material for the development of optoelectronic devices required to operate at high temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114222
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