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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of chemical documentation 11 (1971), S. 174-178 
    ISSN: 1520-5142
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1642-1647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The index of refraction, the extinction coefficient, and the absorptance for gold and tin were measured in a temperature range from room temperature up to the melting point for the wavelength λ=10.6 μm. All measurements were performed under ultrahigh-vacuum conditions using a photometric infrared ellipsometer with a rotating analyzer. Measurements verify a discontinuous jump of the absorptance at the solid-to-liquid phase transition from 3.5 to 6.5% in the case of gold and from 4.9 to 9.2% in the case of tin. The experimental results derived for the clean solid surface are in good agreement with the theoretical prediction by a Drude model, if additionally appropriate effective masses and the anomalous skin effect are taken into account. This theory is much less accurate if applied to the molten state of gold and tin, as was already shown previously for liquid aluminum and copper.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 653-658 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An improved spectrometer design for photoelectron yield spectroscopy is described. Basis of the new spectrometer is a computer-designed electron optics that images the emission spot into the electron multiplier and thereby improves the sensitivity for electrons emitted from the sample. The collection efficiency was experimentally determined to 98.3%. A background of stray electrons which limits the ultimate sensitivity of the method could be substantially reduced by minimizing multiple beam reflections and by coating critical surfaces with a high work function material such as platinum. As a result, photoyield spectra of Au with a dynamical range of ten orders of magnitude are routinely obtained.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 82 (1960), S. 917-929 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 37 (1972), S. 3069-3075 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1247-1249 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near-surface depletion layer for n- as well as p-type samples. The bulk Fermi level positions are attained after annealing at ∼400 °C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet-chemical etching procedure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6636-6643 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have re-investigated the well-studied hydrogen covered Si(100) surface using high resolution electron energy loss spectroscopy (HREELS) with a spectral resolution down to 13 cm1, representing an improvement by a factor of 3–4 compared to earlier work. For the first time in HREELS, it has been possible to clearly distinguish between the stretching vibrations of H-Si-Si-H units on monohydride surfaces with a 2×1 low energy electron diffraction pattern, on the one hand, and SiH2 units on dihydride surfaces with 1×1 symmetry on the other hand, the two being shifted by 5 cm-1 with respect to each other, in good agreement with results from infrared spectroscopy. Furthermore, we find trihydride units even for relatively low exposures beyond monohydride saturation coverage from their distinct stretching frequencies, and this points towards early etching stages. The question of the scattering mechanism applicable in our experiments is discussed. Since there are no spectral limitations in HREELS, we can analyze the bending and scissor vibrations with similar accuracy as the stretching vibration. Again, we observe fine structure in our loss peaks, the umbrella mode, for example, giving once more evidence for trihydride species at the surface. The complicated line shape of all vibrational modes can thus be used to deduce detailed structural information about the surface atomic structure, opening up entirely new possibilities by employing HREELS for the structural characterization of (silicon) surfaces with atomic hydrogen as a local probe. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2291-2297 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fast-beam deflection technique is used to investigate the transient behavior of a laser-induced surface plasma generated by CO2-laser pulses of 2-kW average power near an aluminum surface in various protective gas atmospheres, with a typical pulse energy of 3.3×10−2 J, a pulse repetition rate of 60 kHz, and an average peak power per pulse of 30 kW, corresponding to an intensiy of 6×1012 W/m2. As a laterally probing beam, a cw 10-W CO2 laser is used, whose beam is focused into a small volume in front of the surface. The electrons of the laser-induced plasma passing this volume diffract the cw CO2 laser beam, and the resulting beam deflection is determined by means of a partially absorbing CaF2 wedge in connection with a fast infrared detector. The evaluation of beam deflection 0.15 cm above the surface renders a maximum electro density of 2×1023 m−3 for a surrounding argon atmosphere and 0.7×1023 m−3 for pure helium. Additives of O2 reduce the attainable electron density even more. No plasma can be detected below a threshold of, say, 10 mJ energy per laser pulse. It is verified that high electron density as in the case of argon shields the surface against the incoming CO2 laser pulses so that material processing, such as welding, is rather poor. Better welding results are achieved in helium-oxygen mixtures.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 791-793 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of low-energy cathodoluminescence spectroscopy (CLS) to study optical transitions at defect bonding arrangements at Si–SiO2 interfaces prepared by low-temperature plasma deposition. Variable-depth excitation achieved by different electron injection energies provides a clear distinction between luminescence derived from (i) the near-interface region of the oxide film, (ii) the Si–SiO2 interface, and (iii) the underlying crystalline Si substrate. Cathodoluminescence bands at ∼0.8 and 1 eV are assigned to interfacial Si atom dangling bonds with different numbers of back-bonded Si and O atoms. CLS also reveals higher photon energy features: two bands at ∼1.9 and 2.7 eV assigned to suboxide bonding defects in the as-grown oxide films, as well as a substrate-related feature at ∼3.4 eV. The effects of hydrogenation at 400 °C and rapid thermal annealing at 900 °C, and especially the combination of both process steps is shown to dramatically reduce the intensities of the CLS features assigned to interfacial and suboxide bonding defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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