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  • 1
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    Precambrian reidite discovered in shocked zircon from the Stac Fada impactite, Scotland (2015)
    Geological Society of America (GSA)
    In: Geology
    Details
    Publication Date: 2015-09-15
    Description: Terrestrial impact events have had a profound influence on Earth’s geological, geochemical, and biological evolution. However, the record of Precambrian impacts is poorly constrained due to the dynamic nature of plate tectonics, erosion, and deposition of younger rocks that may destroy or cover the evidence. Here we report the first Precambrian occurrence of the rare mineral reidite (ZrSiO 4 ) within grains of shocked zircon in the ca. 1.18 Ga Stac Fada Member (Stoer Group), northwestern Scotland. The reidite, preserved as 〈2-µm-wide lamellae, is unambiguous evidence of shock pressures in excess of ~30 GPa and confirms the impact origin for the Stac Fada deposit. The reidite lamellae are locally deformed, and sites of deformation record its decomposition to baddeleyite (ZrO 2 ) and amorphous silica, the first natural example of this transformation. The findings demonstrate that reidite and baddeleyite may form and be transported in high-energy ejecta without physical or chemical breakdown and are stable during sedimentary diagenesis and low-grade metamorphism. Thus, reidite may be preserved over time scales exceeding 1 b.y., establishing the use of reidite within detrital shocked zircon from Precambrian strata as a viable and valuable means of recognizing and characterizing ancient terrestrial impact events.
    Print ISSN: 0091-7613
    Electronic ISSN: 1943-2682
    Topics: Geosciences
    Published by Geological Society of America (GSA)
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  • 2
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    Determinants of nucleosome organization in primary human cells (2011)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2011-05-24
    Description: Nucleosomes are the basic packaging units of chromatin, modulating accessibility of regulatory proteins to DNA and thus influencing eukaryotic gene regulation. Elaborate chromatin remodelling mechanisms have evolved that govern nucleosome organization at promoters, regulatory elements, and other functional regions in the genome. Analyses of chromatin landscape have uncovered a variety of mechanisms, including DNA sequence preferences, that can influence nucleosome positions. To identify major determinants of nucleosome organization in the human genome, we used deep sequencing to map nucleosome positions in three primary human cell types and in vitro. A majority of the genome showed substantial flexibility of nucleosome positions, whereas a small fraction showed reproducibly positioned nucleosomes. Certain sites that position in vitro can anchor the formation of nucleosomal arrays that have cell type-specific spacing in vivo. Our results unveil an interplay of sequence-based nucleosome preferences and non-nucleosomal factors in determining nucleosome organization within mammalian cells.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212987/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212987/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Valouev, Anton -- Johnson, Steven M -- Boyd, Scott D -- Smith, Cheryl L -- Fire, Andrew Z -- Sidow, Arend -- R01 GM037706/GM/NIGMS NIH HHS/ -- R01 GM037706-24/GM/NIGMS NIH HHS/ -- R01 GM037706-25/GM/NIGMS NIH HHS/ -- R01 GM037706-26/GM/NIGMS NIH HHS/ -- R01 GM037706-27/GM/NIGMS NIH HHS/ -- R01GM37706/GM/NIGMS NIH HHS/ -- T32HG00044/HG/NHGRI NIH HHS/ -- U01HG004695/HG/NHGRI NIH HHS/ -- England -- Nature. 2011 May 22;474(7352):516-20. doi: 10.1038/nature10002.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Pathology, Stanford University School of Medicine, 300 Pasteur Drive, Stanford, California 94305, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21602827" target="_blank"〉PubMed〈/a〉
    Keywords: CD4-Positive T-Lymphocytes/metabolism ; CD8-Positive T-Lymphocytes/metabolism ; Cells, Cultured ; Chromatin Assembly and Disassembly/*physiology ; *Gene Expression Regulation ; Genome, Human/genetics ; Granulocytes/metabolism ; High-Throughput Nucleotide Sequencing ; Humans ; Micrococcal Nuclease/metabolism ; Nucleosomes/chemistry/genetics/*metabolism ; Organ Specificity ; Transcription, Genetic
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 3
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    Receptor-mediated transport of insulin across endothelial cells (1985)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1985-03-29
    Description: Hormones such as insulin are transported from the interior to the exterior of blood vessels. Whether endothelial cells, which line the inner walls of blood vessels have a role in this transport of hormones is not clear, but it is known that endothelial cells can internalize and release insulin rapidly with little degradation. The transport of iodine-125-labeled insulin was measured directly through the use of dual chambers separated by a horizontal monolayer of cultured bovine aortic endothelial cells. In this setting, endothelial cells took up and released the labeled insulin, thereby transporting it across the cells. The transport of insulin across the endothelial cells was temperature sensitive and was inhibited by unlabeled insulin and by antibody to insulin receptor in proportion to the ability of these substances to inhibit insulin binding to its receptor. More than 80 percent of the transported insulin was intact. These data suggest that insulin is rapidly transported across endothelial cells by a receptor-mediated process.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉King, G L -- Johnson, S M -- 1RO1 EY05110-01/EY/NEI NIH HHS/ -- New York, N.Y. -- Science. 1985 Mar 29;227(4694):1583-6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/3883490" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Blood Vessels/cytology/*metabolism ; Capillaries/metabolism ; Cattle ; Endothelium/cytology/metabolism ; Insulin/*metabolism ; Pinocytosis ; Receptor, Insulin/*metabolism/physiology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 4
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    Infrared microspectroscopy with a synchrotron light source (2000)
    In:  EPIC3Asian Chemistry Letters, Vol.4, Nos.1&2, pp. 45-55, ISSN: 0971-9822
    Details
    Publication Date: 2019-07-17
    Description: We report the initial trial of an infrared microscope at the beamline for infrared spectroscopy at the MAX-I storage ring in Lund, Sweden. Significantly increased microscope signal intensity was observed for synchroton radiation as compared to a standard blackbody light source, up to a factor of 33 depending on wavelength. Systems investigated include single crystals of cis and trans Pt(S(CH3)2)2Cl2 crystals of indandione-1,3-betaine-pyridine and human hair. Two- dimensional maps were made at 25 µm resolution from a 10 µm thick section of a brain from the turnip moth Agrotis segetum. Surface plots were constructed of absoption intensity in the OH stretch, amide I and II, and CH stretching regions. These examples demonstrate the versatility of the technique of infrared microspectroscopy, and the advantage of using a storage ring as an infrared light source.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , peerRev
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  • 5
    Electronic Resource
    Electronic Resource
    Metal complexes as ligands. II. Synthesis, structure determination, and bonding characteristic of certain tin(IV) halide adducts of the nickel(II) and palladium(II) dithiooxalato complexes (1973)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 95 (1973), S. 3875-3886 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00793a010
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1116-1127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The InAs/Ga1−xInxSb strained-layer superlattice (SLS) holds promise as an alternative III–V semiconductor system for long wavelength infrared detectors. In this article, we present the first investigation, to the best of our knowledge, of heterojunction photodiodes using this new material. The devices were grown by molecular beam epitaxy on GaSb substrates, and are comprised of a 38 A(ring) InAs/16 A(ring) Ga0.64In0.36Sb SLS used in double heterojunctions with GaSb contact layers. The structures were designed to optimize the quantum efficiency while minimizing transport barriers at the heterointerfaces. The photodiodes are assessed through the correlation of their performance with the SLS material quality and the detector design. X-ray diffraction, absorption, and Hall measurements are used to determine the SLS material properties. The electrical and optical properties of the photodiodes are determined using current–voltage and spectral responsivity measurements. At 78 K, these devices exhibit rectifying electrical behavior and photoresponse out to a wavelength of 10.6 μm corresponding to the SLS energy gap. The responsivity and resistance in these thin-layered (0.75 μm), unpassivated photodiodes result in a detectivity of 1×1010 cm (square root of)Hz/W at 8.8 μm and 78 K. Based upon the performance of these devices, we conclude that high-sensitivity operation of long-wavelength photovoltaic detectors at temperatures well in excess of conventional III–V band gap-engineered systems, and potentially in excess of HgCdTe, is feasible using this material system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362849
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  • 7
    Electronic Resource
    Electronic Resource
    HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality p-on-n heterojunction infrared detectors have been fabricated using controllably doped HgCdTe grown by liquid phase epitaxy on CdZnTe/GaAs/Si alternative substrates grown by metalorganic chemical vapor deposition and used to demonstrate the first 128×128 focal plane array fabricated on these materials. Detectors with a cutoff wavelength of 6.0 μm and a resistance-area product R0 Aj average of 6.0×104 Ω cm2 at 80 K for 16 189 detectors in the array were achieved, and for operating temperatures above approximately 120 K were comparable in performance to detectors co-fabricated on standard lattice-matched bulk CdZnTe substrates. Below 120 K, detector performance was limited by excess generation-recombination current, probably caused by a higher threading dislocation density compared with that for the bulk substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102632
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  • 8
    Electronic Resource
    Electronic Resource
    Contactless measurement of bulk free-carrier lifetime in cast polycrystalline silicon ingots (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2008-2015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial dependence of the bulk free-carrier lifetime in cast polycrystalline silicon ingots was determined from contactless measurements of optically modulated free-carrier infrared absorption. Using a cw Nd: yttrium aluminum garnet (Nd:YAG) laser (λ=1.319 μm) for a probe and a novel pulsed tunable infrared dye laser (λ=1.10–1.13 μm), with photon energies near the Si band gap, for a pump, the free-carrier lifetime was determined from transient absorption measurements to a maximum depth of 3.0 cm from the surface of polycrystalline silicon ingots. Unmodulated infrared probe transmission measurements were used to monitor relative changes in the bulk precipitate density in ingots due to infrared scattering by the precipitates. Free-carrier lifetime profiles measured along the growth axis of polycrystalline silicon ingots had the same qualitative features as the minority carrier lifetime profile measured from n+p junction solar cells fabricated on the wafered ingots. Differences between the ingot-measured free-carrier lifetimes and the minority carrier lifetime, apparently due to high injection and possibly carrier trapping effects, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337202
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  • 9
    Electronic Resource
    Electronic Resource
    Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 818-820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109918
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2119-2121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High crystalline quality epitaxial CdTe(112)B/ZnTe films were deposited by molecular-beam epitaxy directly onto vicinal Si(112) substrates, without use of GaAs interfacial layers. The films were characterized with x-ray diffraction, optical microscopy, and wet chemical defect etching. Single crystal, twin-free CdTe(112)B films exhibit structural quality exceeding that previously reported for CdTe(112)B heteroepitaxy on GaAs/Si(112) or GaAs(112)B substrates. X-ray rocking curve full width at half-maximum of 72 arcsec for CdTe(224) reflection and near-surface etch pit densities (EPD) of 2×106 cm−2 have been observed for 8-μm-thick CdTe films. EPD depth profiles indicate that the threading dislocation density decreases with increasing II–VI epilayer thickness up to approximately 5 μm thickness and saturates at 2×106 cm−2 for thickness exceeding 5 μm. The CdTe epilayer orientation was observed to tilt 2° away from the Si(112) substrate orientation toward the [001] direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113922
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