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  • 1
    Publication Date: 2013-09-13
    Description: The repair of chromosomal double strand breaks (DSBs) is crucial for the maintenance of genomic integrity. However, the repair of DSBs can also destabilize the genome by causing mutations and chromosomal rearrangements, the driving forces for carcinogenesis and hereditary diseases. Break-induced replication (BIR) is one of the DSB repair pathways that is highly prone to genetic instability. BIR proceeds by invasion of one broken end into a homologous DNA sequence followed by replication that can copy hundreds of kilobases of DNA from a donor molecule all the way through its telomere. The resulting repaired chromosome comes at a great cost to the cell, as BIR promotes mutagenesis, loss of heterozygosity, translocations, and copy number variations, all hallmarks of carcinogenesis. BIR uses most known replication proteins to copy large portions of DNA, similar to S-phase replication. It has therefore been suggested that BIR proceeds by semiconservative replication; however, the model of a bona fide, stable replication fork contradicts the known instabilities associated with BIR such as a 1,000-fold increase in mutation rate compared to normal replication. Here we demonstrate that in budding yeast the mechanism of replication during BIR is significantly different from S-phase replication, as it proceeds via an unusual bubble-like replication fork that results in conservative inheritance of the new genetic material. We provide evidence that this atypical mode of DNA replication, dependent on Pif1 helicase, is responsible for the marked increase in BIR-associated mutations. We propose that the BIR mode of synthesis presents a powerful mechanism that can initiate bursts of genetic instability in eukaryotes, including humans.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3804423/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3804423/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Saini, Natalie -- Ramakrishnan, Sreejith -- Elango, Rajula -- Ayyar, Sandeep -- Zhang, Yu -- Deem, Angela -- Ira, Grzegorz -- Haber, James E -- Lobachev, Kirill S -- Malkova, Anna -- GM080600/GM/NIGMS NIH HHS/ -- GM76020/GM/NIGMS NIH HHS/ -- R01 GM080600/GM/NIGMS NIH HHS/ -- R01GM082950/GM/NIGMS NIH HHS/ -- R01GM084242/GM/NIGMS NIH HHS/ -- R03 ES016434/ES/NIEHS NIH HHS/ -- R03ES016434/ES/NIEHS NIH HHS/ -- R37 GM020056/GM/NIGMS NIH HHS/ -- England -- Nature. 2013 Oct 17;502(7471):389-92. doi: 10.1038/nature12584. Epub 2013 Sep 11.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Biology and Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24025772" target="_blank"〉PubMed〈/a〉
    Keywords: *Chromosome Breakage ; *DNA Breaks, Double-Stranded ; DNA Helicases/metabolism ; DNA Repair/genetics ; DNA Replication/*genetics ; DNA, Fungal/*biosynthesis/genetics ; Genomic Instability/genetics ; Mutagenesis/genetics ; S Phase/genetics ; Saccharomyces cerevisiae/cytology/enzymology/*genetics/metabolism ; Saccharomyces cerevisiae Proteins/metabolism
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5226-5233 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties of a Au/n-ZnSe/n+GaAs structure are examined by studying the results of current-voltage (I-V) and capacitance-voltage (C-V) measurements at temperatures between 77 and 300 K in the dark and under illumination. C-V data at 77 K in the dark show a large hysteresis indicating long-time constants for reaching a steady state. The data also show a large shift in the peak capacitance towards higher-bias values as compared to room-temperature measurements. All 77-K capacitance values in the dark are considerably lower than both the ones at 77 K under illumination and the ones at room temperature. These results suggest charging of the lattice-mismatch-induced extended defect states in ZnSe near the heterojunction interface as well as macroscopic effects such as barrier-limited electron currents flowing into the ZnSe potential well. Furthermore, as additional evidence, 77-K capacitance transients in the data show two distinct time constants which are due to an initial charge rearrangement in ZnSe followed by a relaxation caused by photogenerated currents. I-V characteristics at 77 K show a steep rise in current at about 2.5 V on the Au, both in the dark and under illumination. This indicates either an effective bias-dependent barrier lowering or field-assisted tunneling/recombination current paths at the heterojunction.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 1990-11-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 4
    Publication Date: 2019-06-27
    Description: Computer program for satellite rendezvous and docking maneuver simulations
    Keywords: NAVIGATION
    Type: NASA-CR-103037
    Format: application/pdf
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