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  • 1
    Electronic Resource
    Electronic Resource
    Deep level defects in alpha particle irradiated 6H silicon carbide (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2996-3000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of native and radiation induced defects in metal organic chemical vapor deposition n on p 6H-SiC diodes has been conducted. Three majority carrier levels were found, at Ev+0.50, +0.55, and +0.69 eV, and three minority carrier deep levels were found, at Ec −0.38, −0.48, and −0.58 eV. These six levels were initially observed in the unirradiated materials. Their concentration increased 2 to 13-fold after irradiation to a fluence of 2×1011 cm−2 of 5.5 MeV alpha particles. In addition the carrier removal was monitored during irradiation, and a carrier removal rate of 7.8×104 cm−1 for 5.5 MeV alpha particles was measured. When compared with a similar study of alpha particle irradiation of InP, the results suggest that SiC has radiation resistance comparable to that of InP, another highly radiation resistant semiconductor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360048
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deep level defects in proton irradiated Zn and Cd doped InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1384-1389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP is a relatively radiation-resistant semiconductor and an attractive material for solar cells exposed to radiation in Earth orbit. To better understand this useful property of InP, proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy. After 2 MeV proton irradiation the defects H3, H4, and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The concentrations of the irradiation induced defects were measured and the introduction rates were calculated and compared. The activation energies of the defects were measured and corrected for the effect of electric field on carrier emission. The capture cross sections of the defects were measured directly by the pulse width variation technique. The energy levels and capture cross sections of the defects were not affected by the substitution of Cd for Zn, but the introduction rate of the defect H5 was substantially lower in Cd doped InP, suggesting that this material would make an improved solar cell in a high radiation environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356418
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Deep level defects and carrier removal due to proton and alpha particle irradiation of InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3187-3189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy and capacitance voltage measurements of the defect introduction rates and carrier removal rates for 2 MeV proton and 2 MeV alpha particle irradiations in p-type InP have been performed. The carrier removal rate for 2 MeV protons was 6500 cm−1 and for 2 MeV alpha particles was 73 400 cm−1, or 12 times higher. The defect introduction rates for H4, the predominant radiation induced defect in p-type InP, were 229 per 2 MeV proton and 9000 per 2 MeV alpha particle, or 39 times higher for alpha irradiation. The very large rates of carrier removal and high defect introduction rates in the latter case may limit the usefulness of InP in a radiation environment containing high energy alpha particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356144
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of theθ-α-Al2O3 transformation on the oxidation behavior ofβ-NiAl + Zr (1989)
    Springer
    Oxidation of metals 31 (1989), S. 275-304 
    Details
    ISSN: 1573-4889
    Keywords: NiAl ; Al2O3 scales ; oxide ridges
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Isothermal oxidation of NiAl + Zr has been performed over the temperature range of 800–1200°C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000° C due to the formation of α-Al2O3 from θ-Al2O3. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a shortcircuit outward aluminum diffusion growth mechanism that has been documented in a number of18O tracer studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00846690
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  • 5
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    Deep level defects in alpha particle irradiated 6H silicon carbide (1995)
    American Institute of Physics
    Details
    Publication Date: 1995-09-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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    PAPER CURRENT
  • 6
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    Deep level defects in proton irradiated Zn and Cd doped InP (1994)
    American Institute of Physics
    Details
    Publication Date: 1994-02-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 7
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    Deep level defects and carrier removal due to proton and alpha particle irradiation of InP (1994)
    American Institute of Physics
    Details
    Publication Date: 1994-03-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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    PAPER CURRENT
  • 8
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    Effect of the theta-alpha-Al2O3 transformation on the oxidation behavior of beta-NiAl+Zr (1989)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Isothermal oxidation of NiAl+Zr has been performed over the temperature range of 800-1200 C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000 C due to the formation of alpha-Al2O3 from theta-Al2O3. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a short-circuit outward aluminum diffusion growth mechanism that has been documented in a number of O-18 tracer studies.
    Keywords: METALLIC MATERIALS
    Type: Oxidation of Metals (ISSN 0030-770X); 31; 275-304
    Format: text
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    NASA TECHNICAL REPORTS
  • 9
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    Silicon Carbide Radioisotope Batteries (2005)
    In:  CASI
    Details
    Publication Date: 2018-06-06
    Description: The substantial radiation resistance and large bandgap of SiC semiconductor materials makes them an attractive candidate for application in a high efficiency, long life radioisotope battery. To evaluate their potential in this application, simulated batteries were constructed using SiC diodes and the alpha particle emitter Americium Am-241 or the beta particle emitter Promethium Pm-147. The Am-241 based battery showed high initial power output and an initial conversion efficiency of approximately 16%, but the power output decayed 52% in 500 hours due to radiation damage. In contrast the Pm-147 based battery showed a similar power output level and an initial conversion efficiency of approximately 0.6%, but no degradation was observed in 500 hours. However, the Pm-147 battery required approximately 1000 times the particle fluence as the Am-242 battery to achieve a similar power output. The advantages and disadvantages of each type of battery and suggestions for future improvements will be discussed.
    Keywords: Energy Production and Conversion
    Type: 16th Space Photovoltaic Research and Technology Conference; 199-203; NASA/CP-2001-210747/REV1
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 10
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    Chemical Fabrication Used to Produce Thin-Film Materials for High Power-to- Weight-Ratio Space Photovoltaic Arrays (2000)
    In:  CASI
    Details
    Publication Date: 2018-06-05
    Description: The key to achieving high specific power (watts per kilogram) space solar arrays is the development of a high-efficiency, thin-film solar cell that can be fabricated directly on a flexible, lightweight, space-qualified durable substrate such as Kapton (DuPont) or other polyimide or suitable polymer film. Cell efficiencies approaching 20 percent at AM0 (air mass zero) are required. Current thin-film cell fabrication approaches are limited by either (1) the ultimate efficiency that can be achieved with the device material and structure or (2) the requirement for high-temperature deposition processes that are incompatible with all presently known flexible polyimide or other polymer substrate materials. Cell fabrication processes must be developed that will produce high-efficiency cells at temperatures below 400 degrees Celsius, and preferably below 300 degress Celsius to minimize the problems associated with the difference between the coefficients of thermal expansion of the substrate and thin-film solar cell and/or the decomposition of the substrate.
    Keywords: Chemistry and Materials (General)
    Type: Research and Technology 1999; NASA/TM-2000-209639
    Format: application/pdf
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